Passivation of Bi2Te3 topological insulator by transferred CVD-graphene

Galceran, Regina|||0000-0002-2080-2575; Bonell, Frédéric|||0000-0001-7296-0404; Camosi, Lorenzo; Sauthier, Guillaume|||0000-0003-3566-3878; Gebeyehu, Zewdu M.|||0000-0001-6451-6100; Esplandiu Egido, Maria José|||0000-0003-2079-0639; Arrighi, Aloïs|||0000-0002-9774-852X; Fernández Aguirre, Iván|||0000-0002-0123-1703; Figueroa García, Adriana Isabel|||0000-0002-8498-9383; Sierra, Juan F.|||0000-0002-5438-0534; Valenzuela, Sergio O.|||0000-0002-4632-8891

Passivation of Bi2Te3 topological insulator by transferred CVD-graphene

The investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X-ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated and inte...

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Authors:	Galceran, Regina\|\|\|0000-0002-2080-2575, Bonell, Frédéric\|\|\|0000-0001-7296-0404, Camosi, Lorenzo, Sauthier, Guillaume\|\|\|0000-0003-3566-3878, Gebeyehu, Zewdu M.\|\|\|0000-0001-6451-6100, Esplandiu Egido, Maria José\|\|\|0000-0003-2079-0639, Arrighi, Aloïs\|\|\|0000-0002-9774-852X, Fernández Aguirre, Iván\|\|\|0000-0002-0123-1703, Figueroa García, Adriana Isabel\|\|\|0000-0002-8498-9383, Sierra, Juan F.\|\|\|0000-0002-5438-0534, Valenzuela, Sergio O.\|\|\|0000-0002-4632-8891
Format:	article
Publication Date:	2022
Country:	España
Institution:	Universitat Autònoma de Barcelona
Repository:	Dipòsit Digital de Documents de la UAB
Language:	English
OAI Identifier:	oai:ddd.uab.cat:273653
Online Access:	https://ddd.uab.cat/record/273653 https://dx.doi.org/urn:doi:10.1002/admi.202201997
Access Level:	Open access
Keyword:	Bi2Te3 Graphene-topological insulator interface Intermixing Passivation XPS

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spelling	Passivation of Bi2Te3 topological insulator by transferred CVD-graphenetoward intermixing-free interfacesGalceran, Regina\|\|\|0000-0002-2080-2575Bonell, Frédéric\|\|\|0000-0001-7296-0404Camosi, LorenzoSauthier, Guillaume\|\|\|0000-0003-3566-3878Gebeyehu, Zewdu M.\|\|\|0000-0001-6451-6100Esplandiu Egido, Maria José\|\|\|0000-0003-2079-0639Arrighi, Aloïs\|\|\|0000-0002-9774-852XFernández Aguirre, Iván\|\|\|0000-0002-0123-1703Figueroa García, Adriana Isabel\|\|\|0000-0002-8498-9383Sierra, Juan F.\|\|\|0000-0002-5438-0534Valenzuela, Sergio O.\|\|\|0000-0002-4632-8891Bi2Te3Graphene-topological insulator interfaceIntermixingPassivationXPSThe investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X-ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated and intermixing-free interfaces in the topological insulator BiTe by means of dry-transferred CVD graphene are reported. After air exposure, no traces of BiTe oxidation are found. Furthermore, it is demonstrated that graphene acts as a very efficient metal and chalcogen diffusion barrier in BiTe/graphene/permalloy (Py) heterostructures, which are relevant for spintronics. Such results are in stark contrast with the significant surface degradation observed in bare BiTe under ambient conditions and the deep Bi-Te bonding disruption that occurs in BiTe/Py heterostructures. These findings provide a new approach to control and engineer topological insulator interfaces for spintronic applications and a new platform to investigate the combined use of graphene and topological insulator Dirac states. 22022-01-0120222022-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/273653https://dx.doi.org/urn:doi:10.1002/admi.202201997reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengEuropean Commission https://doi.org/10.13039/501100000780 881603European Commission https://doi.org/10.13039/501100000780 840588European Commission https://doi.org/10.13039/501100000780 713673Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PCI2021-122035-2AAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-111773RB-I00Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 RYC2019-028368-IMinisterio de Ciencia e Innovación https://doi.org/10.13039/501100004837 PGC2018-095032-B-100Ministerio de Ciencia e Innovación https://doi.org/10.13039/501100004837 SEV-2017-0706"la Caixa" Foundation https://doi.org/10.13039/100010434 LCF/BQ/DI18/11660030open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2736532026-06-06T12:50:31Z
dc.title.none.fl_str_mv	Passivation of Bi2Te3 topological insulator by transferred CVD-graphene toward intermixing-free interfaces
title	Passivation of Bi2Te3 topological insulator by transferred CVD-graphene
spellingShingle	Passivation of Bi2Te3 topological insulator by transferred CVD-graphene Galceran, Regina\|\|\|0000-0002-2080-2575 Bi2Te3 Graphene-topological insulator interface Intermixing Passivation XPS
title_short	Passivation of Bi2Te3 topological insulator by transferred CVD-graphene
title_full	Passivation of Bi2Te3 topological insulator by transferred CVD-graphene
title_fullStr	Passivation of Bi2Te3 topological insulator by transferred CVD-graphene
title_full_unstemmed	Passivation of Bi2Te3 topological insulator by transferred CVD-graphene
title_sort	Passivation of Bi2Te3 topological insulator by transferred CVD-graphene
dc.creator.none.fl_str_mv	Galceran, Regina\|\|\|0000-0002-2080-2575 Bonell, Frédéric\|\|\|0000-0001-7296-0404 Camosi, Lorenzo Sauthier, Guillaume\|\|\|0000-0003-3566-3878 Gebeyehu, Zewdu M.\|\|\|0000-0001-6451-6100 Esplandiu Egido, Maria José\|\|\|0000-0003-2079-0639 Arrighi, Aloïs\|\|\|0000-0002-9774-852X Fernández Aguirre, Iván\|\|\|0000-0002-0123-1703 Figueroa García, Adriana Isabel\|\|\|0000-0002-8498-9383 Sierra, Juan F.\|\|\|0000-0002-5438-0534 Valenzuela, Sergio O.\|\|\|0000-0002-4632-8891
author	Galceran, Regina\|\|\|0000-0002-2080-2575
author_facet	Galceran, Regina\|\|\|0000-0002-2080-2575 Bonell, Frédéric\|\|\|0000-0001-7296-0404 Camosi, Lorenzo Sauthier, Guillaume\|\|\|0000-0003-3566-3878 Gebeyehu, Zewdu M.\|\|\|0000-0001-6451-6100 Esplandiu Egido, Maria José\|\|\|0000-0003-2079-0639 Arrighi, Aloïs\|\|\|0000-0002-9774-852X Fernández Aguirre, Iván\|\|\|0000-0002-0123-1703 Figueroa García, Adriana Isabel\|\|\|0000-0002-8498-9383 Sierra, Juan F.\|\|\|0000-0002-5438-0534 Valenzuela, Sergio O.\|\|\|0000-0002-4632-8891
author_role	author
author2	Bonell, Frédéric\|\|\|0000-0001-7296-0404 Camosi, Lorenzo Sauthier, Guillaume\|\|\|0000-0003-3566-3878 Gebeyehu, Zewdu M.\|\|\|0000-0001-6451-6100 Esplandiu Egido, Maria José\|\|\|0000-0003-2079-0639 Arrighi, Aloïs\|\|\|0000-0002-9774-852X Fernández Aguirre, Iván\|\|\|0000-0002-0123-1703 Figueroa García, Adriana Isabel\|\|\|0000-0002-8498-9383 Sierra, Juan F.\|\|\|0000-0002-5438-0534 Valenzuela, Sergio O.\|\|\|0000-0002-4632-8891
author2_role	author author author author author author author author author author
dc.subject.none.fl_str_mv	Bi2Te3 Graphene-topological insulator interface Intermixing Passivation XPS
topic	Bi2Te3 Graphene-topological insulator interface Intermixing Passivation XPS
description	The investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X-ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated and intermixing-free interfaces in the topological insulator BiTe by means of dry-transferred CVD graphene are reported. After air exposure, no traces of BiTe oxidation are found. Furthermore, it is demonstrated that graphene acts as a very efficient metal and chalcogen diffusion barrier in BiTe/graphene/permalloy (Py) heterostructures, which are relevant for spintronics. Such results are in stark contrast with the significant surface degradation observed in bare BiTe under ambient conditions and the deep Bi-Te bonding disruption that occurs in BiTe/Py heterostructures. These findings provide a new approach to control and engineer topological insulator interfaces for spintronic applications and a new platform to investigate the combined use of graphene and topological insulator Dirac states.
publishDate	2022
dc.date.none.fl_str_mv	2 2022-01-01 2022 2022-01-01
dc.type.none.fl_str_mv	Article http://purl.org/coar/resource_type/c_6501 VoR http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv	info:eu-repo/semantics/article
format	article
dc.identifier.none.fl_str_mv	https://ddd.uab.cat/record/273653 https://dx.doi.org/urn:doi:10.1002/admi.202201997
url	https://ddd.uab.cat/record/273653 https://dx.doi.org/urn:doi:10.1002/admi.202201997
dc.language.none.fl_str_mv	Inglés eng
language_invalid_str_mv	Inglés
language	eng
dc.relation.none.fl_str_mv	European Commission https://doi.org/10.13039/501100000780 881603 European Commission https://doi.org/10.13039/501100000780 840588 European Commission https://doi.org/10.13039/501100000780 713673 Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PCI2021-122035-2A Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-111773RB-I00 Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 RYC2019-028368-I Ministerio de Ciencia e Innovación https://doi.org/10.13039/501100004837 PGC2018-095032-B-100 Ministerio de Ciencia e Innovación https://doi.org/10.13039/501100004837 SEV-2017-0706 "la Caixa" Foundation https://doi.org/10.13039/100010434 LCF/BQ/DI18/11660030
dc.rights.none.fl_str_mv	open access http://purl.org/coar/access_right/c_abf2 https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv	info:eu-repo/semantics/openAccess
rights_invalid_str_mv	open access http://purl.org/coar/access_right/c_abf2 https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv	openAccess
dc.format.none.fl_str_mv	application/pdf
dc.source.none.fl_str_mv	reponame:Dipòsit Digital de Documents de la UAB instname:Universitat Autònoma de Barcelona
instname_str	Universitat Autònoma de Barcelona
reponame_str	Dipòsit Digital de Documents de la UAB
collection	Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score	15,300719

Passivation of Bi2Te3 topological insulator by transferred CVD-graphene

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