Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications

The realization of artificial neural circuits requires synaptic materials and devices that show adaptation at different time scales to modulate signal transmission between neurons according to the desired applications. Sensory-motor and intelligence operation in the brain relies on the dynamical pro...

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Detalles Bibliográficos
Autores: Bisquert, Juan, Shim, Wooyoung, Kim, So Yeon, Linares-Barranco, Bernabé
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/402251
Acceso en línea:http://hdl.handle.net/10261/402251
https://api.elsevier.com/content/abstract/scopus_id/105008442460
Access Level:acceso abierto
Palabra clave:Memristors
Neuromorphic computing
Synapses
id ES_232684d8aecb047f7ba2eb12ae20b297
oai_identifier_str oai:digital.csic.es:10261/402251
network_acronym_str ES
network_name_str España
repository_id_str
spelling Synaptic Function in Memristor Devices for Neuromorphic Circuit ApplicationsBisquert, JuanShim, WooyoungKim, So YeonLinares-Barranco, BernabéMemristorsNeuromorphic computingSynapsesThe realization of artificial neural circuits requires synaptic materials and devices that show adaptation at different time scales to modulate signal transmission between neurons according to the desired applications. Sensory-motor and intelligence operation in the brain relies on the dynamical properties of synapses that adapt to the frequency and synchronization of voltage spikes. The properties of potentiation and depression of the synapse conductivity control the plasticity and adaptation of synapses. Here, the general dynamical properties of ionic or electronic current conduction that form the main rules of synaptic activity are discussed. The basic model requirements of a memristor or chemical inductor to produce an adaptation of conductance to incoming stimuli are established. The synaptic response can be described by the combination of three factors: A conduction process that depends on an internal state variable x; this variable causes rectification at an onset voltage; it also causes a memory, characterized by a delay in response to the stimulus. Diverse diagnosis methods are described that connect the nonlinear time response, the nonlinear cycling of current–voltage curves, and the linear frequency response of impedance spectroscopy, to assess the adaptation properties.This work was funded by the European Research Council (ERC) via Advanced Grant No. 101097688 (PeroSpiker).Peer reviewedJohn Wiley & SonsEuropean CommissionEuropean Research CouncilBisquert, Juan [0000-0003-4987-4887]Kim, So Yeon [0000-0003-1331-9937]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/402251https://api.elsevier.com/content/abstract/scopus_id/105008442460reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/HE/101097688Bisquert, Juan; Shim, Wooyoung; Kim, So Yeon; Linares-Barranco, Bernabé; 2025; Dataset of "Synaptic function in two-contact devices for neuromorphic circuit applications"; Zenodo; https://doi.org/10.5281/zenodo.15266757https://doi.org/10.1002/aelm.202400903Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/4022512026-05-22T06:33:51Z
dc.title.none.fl_str_mv Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications
title Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications
spellingShingle Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications
Bisquert, Juan
Memristors
Neuromorphic computing
Synapses
title_short Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications
title_full Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications
title_fullStr Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications
title_full_unstemmed Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications
title_sort Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications
dc.creator.none.fl_str_mv Bisquert, Juan
Shim, Wooyoung
Kim, So Yeon
Linares-Barranco, Bernabé
author Bisquert, Juan
author_facet Bisquert, Juan
Shim, Wooyoung
Kim, So Yeon
Linares-Barranco, Bernabé
author_role author
author2 Shim, Wooyoung
Kim, So Yeon
Linares-Barranco, Bernabé
author2_role author
author
author
dc.contributor.none.fl_str_mv European Commission
European Research Council
Bisquert, Juan [0000-0003-4987-4887]
Kim, So Yeon [0000-0003-1331-9937]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Memristors
Neuromorphic computing
Synapses
topic Memristors
Neuromorphic computing
Synapses
description The realization of artificial neural circuits requires synaptic materials and devices that show adaptation at different time scales to modulate signal transmission between neurons according to the desired applications. Sensory-motor and intelligence operation in the brain relies on the dynamical properties of synapses that adapt to the frequency and synchronization of voltage spikes. The properties of potentiation and depression of the synapse conductivity control the plasticity and adaptation of synapses. Here, the general dynamical properties of ionic or electronic current conduction that form the main rules of synaptic activity are discussed. The basic model requirements of a memristor or chemical inductor to produce an adaptation of conductance to incoming stimuli are established. The synaptic response can be described by the combination of three factors: A conduction process that depends on an internal state variable x; this variable causes rectification at an onset voltage; it also causes a memory, characterized by a delay in response to the stimulus. Diverse diagnosis methods are described that connect the nonlinear time response, the nonlinear cycling of current–voltage curves, and the linear frequency response of impedance spectroscopy, to assess the adaptation properties.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/402251
https://api.elsevier.com/content/abstract/scopus_id/105008442460
url http://hdl.handle.net/10261/402251
https://api.elsevier.com/content/abstract/scopus_id/105008442460
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/HE/101097688
Bisquert, Juan; Shim, Wooyoung; Kim, So Yeon; Linares-Barranco, Bernabé; 2025; Dataset of "Synaptic function in two-contact devices for neuromorphic circuit applications"; Zenodo; https://doi.org/10.5281/zenodo.15266757
https://doi.org/10.1002/aelm.202400903
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv John Wiley & Sons
publisher.none.fl_str_mv John Wiley & Sons
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869404624167895040
score 15,812429

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