Study of point defects in CdTe and CdTe:V by cathodoluminescence
Cathodoluminescence in the scanning electron microscope has been used to investigate the relationship of point defects in CdTe and CdTe:V with luminescence bands at 1.40 and 1.13 eV. V has been found to inhibit the 1.40 eV luminescence. Annealing experiments indicate that Cd and Te vacancies are inv...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1994 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59271 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59271 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Physics Applied Física de materiales |
| Sumario: | Cathodoluminescence in the scanning electron microscope has been used to investigate the relationship of point defects in CdTe and CdTe:V with luminescence bands at 1.40 and 1.13 eV. V has been found to inhibit the 1.40 eV luminescence. Annealing experiments indicate that Cd and Te vacancies are involved in the mentioned emission bands. |
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