A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conve...

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Detalles Bibliográficos
Autores: Martil De La Plaza, Ignacio, González Díaz, Germán, Prado Millán, Álvaro Del, San Andrés Serrano, Enrique
Tipo de recurso: artículo
Fecha de publicación:2003
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/51140
Acceso en línea:https://hdl.handle.net/20.500.14352/51140
Access Level:acceso abierto
Palabra clave:537
Thin-Films
Fabrication.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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spelling A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxideMartil De La Plaza, IgnacioGonzález Díaz, GermánPrado Millán, Álvaro DelSan Andrés Serrano, Enrique537Thin-FilmsFabrication.ElectricidadElectrónica (Física)2202.03 ElectricidadIn this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conventional systems. We present results obtained by Xray diffraction and FTIR spectroscopy. Moreover, we will compare the properties of the resulting TiO2-insulator-metal capacitors with those of anodic Ta2O5. Very thin films of TiO2 have been obtained with a very promising quality for future electron device fabrication.Kluwer Academic Publ.Universidad Complutense de Madrid20032003-05-0120032003-05-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/51140reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/511402026-06-02T12:44:21Z
dc.title.none.fl_str_mv A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
title A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
spellingShingle A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
Martil De La Plaza, Ignacio
537
Thin-Films
Fabrication.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
title_full A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
title_fullStr A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
title_full_unstemmed A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
title_sort A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro Del
San Andrés Serrano, Enrique
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro Del
San Andrés Serrano, Enrique
author_role author
author2 González Díaz, Germán
Prado Millán, Álvaro Del
San Andrés Serrano, Enrique
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Thin-Films
Fabrication.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Thin-Films
Fabrication.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conventional systems. We present results obtained by Xray diffraction and FTIR spectroscopy. Moreover, we will compare the properties of the resulting TiO2-insulator-metal capacitors with those of anodic Ta2O5. Very thin films of TiO2 have been obtained with a very promising quality for future electron device fabrication.
publishDate 2003
dc.date.none.fl_str_mv 2003
2003-05-01
2003
2003-05-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/51140
url https://hdl.handle.net/20.500.14352/51140
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Kluwer Academic Publ.
publisher.none.fl_str_mv Kluwer Academic Publ.
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869404157971005440
score 15,300724

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