Dielectric and transient electrical response of SmB6 single crystals

We report results from an in–plane and out–of–plane impedance study on SmB6 single crystals, performed at low temperatures and over a wide frequency range. A universal equivalent circuit describes the dielectric behavior of this system across the transition, from surface to bulk dominated electrical...

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Detalles Bibliográficos
Autores: Stankiewicz, J., Schlottmann, P., Blasco, J., Ciomaga Hatnean, M., Balakrishnan, G.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Universidad de Zaragoza
Repositorio:Zaguán. Repositorio Digital de la Universidad de Zaragoza
OAI Identifier:oai:zaguan.unizar.es:123911
Acceso en línea:http://zaguan.unizar.es/record/123911
Access Level:acceso abierto
Descripción
Sumario:We report results from an in–plane and out–of–plane impedance study on SmB6 single crystals, performed at low temperatures and over a wide frequency range. A universal equivalent circuit describes the dielectric behavior of this system across the transition, from surface to bulk dominated electrical conduction between 2 and 10 K. We identify the resistive, capacitive, and inductive contributions to the impedance. The equivalent inductance, obtained from fits to experimental data, drops drastically with increasing temperature, as the bulk starts to control electrical conduction. Self–sustained voltage oscillations, observed below 6 K across small crystals when biased with a dc current, point to a large SmB6 self–capacitance, likely brought by the surface states.