Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition. The epitaxial orthorhombic films, (111)-oriented and with a very flat surface, show robust ferroelectric properties at room temperature. They present a remnan...

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Authors: Lyu, Jike, Fina, Ignasi, Solanas, Raul, Fontcuberta, Josep, Sánchez Barrera, Florencio
Format: article
Status:Versión aceptada para publicación
Publication Date:2018
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/254182
Online Access:http://hdl.handle.net/10261/254182
Access Level:Open access
Keyword:Ferroelectric HfO2
Oxides on silicon
Epitaxial thin films
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spelling Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin filmsLyu, JikeFina, IgnasiSolanas, RaulFontcuberta, JosepSánchez Barrera, FlorencioFerroelectric HfO2Oxides on siliconEpitaxial thin filmsFerroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition. The epitaxial orthorhombic films, (111)-oriented and with a very flat surface, show robust ferroelectric properties at room temperature. They present a remnant polarization around 20 μC/cm2 without the need of a wake-up process, a large coercive electric field of around 3 MV/cm, an extremely long retention extending well beyond 10 years, and an endurance up to about 108 cycles. Such outstanding properties in the nascent research on epitaxial HfO2-based ferroelectric films can pave the way for a better understanding of the effects of orientation, interfaces, strain, and defects on ferroelectricity in HfO2.Financial support from the Spanish Ministry of Economy and Competitiveness, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2015-0496) and the MAT2017-85232-R (AEI/FEDER,UE), MAT2014-56063-C2-1-R, and MAT2015-73839-JIN projects, and from Generalitat de Catalunya (2017 SGR 1377) is acknowledged. I.F. acknowledges RyC contract RYC-2017-22531. J.L. was financially supported by China Scholarship Council (CSC) with No. 201506080019. J.L. work has been done as a part of his Ph.D. program in Materials Science at Universitat Autònoma de Barcelona.Peer reviewedAmerican Physical SocietyMinisterio de Economía y Competitividad (España)Generalitat de CatalunyaChina Scholarship CouncilConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202120212018info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/254182reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/MAT2017-85232-Rinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2014-56063-C2-1-Rhttp://dx.doi.org/10.1063/1.5041715Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2541822026-05-22T06:33:51Z
dc.title.none.fl_str_mv Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
title Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
spellingShingle Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
Lyu, Jike
Ferroelectric HfO2
Oxides on silicon
Epitaxial thin films
title_short Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
title_full Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
title_fullStr Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
title_full_unstemmed Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
title_sort Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
dc.creator.none.fl_str_mv Lyu, Jike
Fina, Ignasi
Solanas, Raul
Fontcuberta, Josep
Sánchez Barrera, Florencio
author Lyu, Jike
author_facet Lyu, Jike
Fina, Ignasi
Solanas, Raul
Fontcuberta, Josep
Sánchez Barrera, Florencio
author_role author
author2 Fina, Ignasi
Solanas, Raul
Fontcuberta, Josep
Sánchez Barrera, Florencio
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Economía y Competitividad (España)
Generalitat de Catalunya
China Scholarship Council
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Ferroelectric HfO2
Oxides on silicon
Epitaxial thin films
topic Ferroelectric HfO2
Oxides on silicon
Epitaxial thin films
description Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition. The epitaxial orthorhombic films, (111)-oriented and with a very flat surface, show robust ferroelectric properties at room temperature. They present a remnant polarization around 20 μC/cm2 without the need of a wake-up process, a large coercive electric field of around 3 MV/cm, an extremely long retention extending well beyond 10 years, and an endurance up to about 108 cycles. Such outstanding properties in the nascent research on epitaxial HfO2-based ferroelectric films can pave the way for a better understanding of the effects of orientation, interfaces, strain, and defects on ferroelectricity in HfO2.
publishDate 2018
dc.date.none.fl_str_mv 2018
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/254182
url http://hdl.handle.net/10261/254182
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/MAT2017-85232-R
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2014-56063-C2-1-R
http://dx.doi.org/10.1063/1.5041715
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.198674

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