IGBT Overcurrent Capabilities in Resonant Circuits

The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems. The field of power electronics and their correct a...

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Detalles Bibliográficos
Autores: Al-Hadithi, Basil Mohammed, Peña Jiménez, Miguel Antonio
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/396486
Acceso en línea:http://hdl.handle.net/10261/396486
https://api.elsevier.com/content/abstract/scopus_id/85211770927
Access Level:acceso abierto
Palabra clave:IGBT
IGBT driver
MOSFET
Overcurrent sensor
Resonant circuits
Zero current switching
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spelling IGBT Overcurrent Capabilities in Resonant CircuitsAl-Hadithi, Basil MohammedPeña Jiménez, Miguel AntonioIGBTIGBT driverMOSFETOvercurrent sensorResonant circuitsZero current switchingThe control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems. The field of power electronics and their correct activation ensures that the transistors are operated without being destroyed. In this work, a double resonant transformer was built and used to produce very high currents. These currents are switched by a full bridge of resonant IGBT transistors to demonstrate the feasibility of exceeding the maximum permissible transistor currents in a resonant system. The system is controlled by the feedback from two current sensors. In this case the currents exceed in a 170% the peak current of the transistor without problems. In this way, resonant circuits with IGBT transistors can be designed with currents lower than the maximum currents of the resonant circuit, therefore reducing the cost of the circuit and reducing the switching losses to nearly zero.This research received no external funding.Peer reviewedMultidisciplinary Digital Publishing InstituteAl-Hadithi, Basil Mohammed [0000-0002-8786-5511]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252024info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/396486https://api.elsevier.com/content/abstract/scopus_id/85211770927reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésThe underlying dataset has been published as supplementary material of the article in the publisher platform at DOI https://doi.org/10.3390/s24237631https://doi.org/10.3390/s24237631Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3964862026-05-22T06:33:51Z
dc.title.none.fl_str_mv IGBT Overcurrent Capabilities in Resonant Circuits
title IGBT Overcurrent Capabilities in Resonant Circuits
spellingShingle IGBT Overcurrent Capabilities in Resonant Circuits
Al-Hadithi, Basil Mohammed
IGBT
IGBT driver
MOSFET
Overcurrent sensor
Resonant circuits
Zero current switching
title_short IGBT Overcurrent Capabilities in Resonant Circuits
title_full IGBT Overcurrent Capabilities in Resonant Circuits
title_fullStr IGBT Overcurrent Capabilities in Resonant Circuits
title_full_unstemmed IGBT Overcurrent Capabilities in Resonant Circuits
title_sort IGBT Overcurrent Capabilities in Resonant Circuits
dc.creator.none.fl_str_mv Al-Hadithi, Basil Mohammed
Peña Jiménez, Miguel Antonio
author Al-Hadithi, Basil Mohammed
author_facet Al-Hadithi, Basil Mohammed
Peña Jiménez, Miguel Antonio
author_role author
author2 Peña Jiménez, Miguel Antonio
author2_role author
dc.contributor.none.fl_str_mv Al-Hadithi, Basil Mohammed [0000-0002-8786-5511]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv IGBT
IGBT driver
MOSFET
Overcurrent sensor
Resonant circuits
Zero current switching
topic IGBT
IGBT driver
MOSFET
Overcurrent sensor
Resonant circuits
Zero current switching
description The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems. The field of power electronics and their correct activation ensures that the transistors are operated without being destroyed. In this work, a double resonant transformer was built and used to produce very high currents. These currents are switched by a full bridge of resonant IGBT transistors to demonstrate the feasibility of exceeding the maximum permissible transistor currents in a resonant system. The system is controlled by the feedback from two current sensors. In this case the currents exceed in a 170% the peak current of the transistor without problems. In this way, resonant circuits with IGBT transistors can be designed with currents lower than the maximum currents of the resonant circuit, therefore reducing the cost of the circuit and reducing the switching losses to nearly zero.
publishDate 2024
dc.date.none.fl_str_mv 2024
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/396486
https://api.elsevier.com/content/abstract/scopus_id/85211770927
url http://hdl.handle.net/10261/396486
https://api.elsevier.com/content/abstract/scopus_id/85211770927
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv The underlying dataset has been published as supplementary material of the article in the publisher platform at DOI https://doi.org/10.3390/s24237631
https://doi.org/10.3390/s24237631
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute
publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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