Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT
The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost. This paper investigates a HyS based on Si-IGBT (silicon-insulated gate bipolar transistor) in parallel with a SiC-MOSFET (sili...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2025 |
| País: | Brasil |
| Institución: | Associação Brasileira de Eletrônica de Potência (SOBRAEP) |
| Repositorio: | Eletrônica de Potência (Online) |
| Idioma: | inglés |
| OAI Identifier: | oai:ojs2.journal.sobraep.org.br:article/1009 |
| Acceso en línea: | https://journal.sobraep.org.br/index.php/rep/article/view/1009 |
| Access Level: | acceso abierto |
| Palabra clave: | Hybrid Switch Silicon IGBT Silicon Carbide MOSFET Parallelization Cost-effective Design |
| Sumario: | The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost. This paper investigates a HyS based on Si-IGBT (silicon-insulated gate bipolar transistor) in parallel with a SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor), highlighting the maincharacteristics and challenges to obtain a cost-effective device. Simulations in PLECS and LT-Spice reveal significant phenomena that arise during the conduction and switching of HyS devices. Experimental tests conducted on a double pulse test circuit validate the initial analyses and compare HyS switching losses with the standard solution based on IGBT. Finally, some insights on this technology are provided. |
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