Process and temperature compensation for RF low-noise amplifiers and mixers
Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated in order to maintain acceptable performance across all process corners and throughout the temperature...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2009 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/11053 |
| Acceso en línea: | https://hdl.handle.net/2117/11053 https://dx.doi.org/10.1109/TCSI.2009.2031707 |
| Access Level: | acceso abierto |
| Palabra clave: | Low noise amplifiers Radio frequency microelectromechanical systems Electronic circuits -- Temperature compensation Metal oxide semiconductors, Complementary Electronic engineering Electrònica Àrees temàtiques de la UPC::Enginyeria electrònica |
| Sumario: | Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated in order to maintain acceptable performance across all process corners and throughout the temperature range. This paper proposes a new technique consisting of a compensation circuit that adapts and generates the appropriate bias voltage for LNAs and mixers so that the variability with temperature and process corners of their main performance metrics (S-parameters, gain, noise figure, etc.) is minimized. |
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