Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy

Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the em...

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Detalles Bibliográficos
Autores: Schaab, Jakob, Shapovalov, Konstantin, Schoenherr, P., Hackl, J., Khan, M. I., Hentschel, Mario, Yan, Z., Bourret, Edith, Schneider, C. M., Nemsak, S., Stengel, Massimiliano, Cano, Andrés, Meier, D.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2019
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/204533
Acceso en línea:http://hdl.handle.net/10261/204533
Access Level:acceso abierto
Descripción
Sumario:Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Our study introduces an X-PEEM-based approach for lowtemperature electrostatic potential mapping, facilitating nanoscale spatial resolution and data acquisition times on the order of 0.1–1 s.

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