Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering

CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We...

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Detalles Bibliográficos
Autores: Martil De La Plaza, Ignacio, González Díaz, Germán, Hernández Rojas, J. L., Lucía Mulas, María Luisa, Sánchez Quesada, Francisco, Santamaría Sánchez-Barriga, Jacobo
Tipo de recurso: artículo
Fecha de publicación:1992
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59311
Acceso en línea:https://hdl.handle.net/20.500.14352/59311
Access Level:acceso abierto
Palabra clave:537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/59311
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repository_id_str
spelling Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputteringMartil De La Plaza, IgnacioGonzález Díaz, GermánHernández Rojas, J. L.Lucía Mulas, María LuisaSánchez Quesada, FranciscoSantamaría Sánchez-Barriga, Jacobo537PhysicsApplied.ElectricidadElectrónica (Física)2202.03 ElectricidadCuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x = 0, x = 0.5, and x = 0.75, respectively.Amer Inst PhysicsUniversidad Complutense de Madrid19921992-04-1319921992-04-13journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59311reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/593112026-06-02T12:44:21Z
dc.title.none.fl_str_mv Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
title Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
spellingShingle Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
Martil De La Plaza, Ignacio
537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
title_full Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
title_fullStr Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
title_full_unstemmed Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
title_sort Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
Hernández Rojas, J. L.
Lucía Mulas, María Luisa
Sánchez Quesada, Francisco
Santamaría Sánchez-Barriga, Jacobo
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
Hernández Rojas, J. L.
Lucía Mulas, María Luisa
Sánchez Quesada, Francisco
Santamaría Sánchez-Barriga, Jacobo
author_role author
author2 González Díaz, Germán
Hernández Rojas, J. L.
Lucía Mulas, María Luisa
Sánchez Quesada, Francisco
Santamaría Sánchez-Barriga, Jacobo
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x = 0, x = 0.5, and x = 0.75, respectively.
publishDate 1992
dc.date.none.fl_str_mv 1992
1992-04-13
1992
1992-04-13
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59311
url https://hdl.handle.net/20.500.14352/59311
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Amer Inst Physics
publisher.none.fl_str_mv Amer Inst Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869403465620389888
score 15,300724

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