InSb/InP core-shell colloidal quantum dots for sensitive and fast short-wave infrared photodetectors
Colloidal quantum dot (CQD) technology is considered the main contender toward a low-cost high-performance optoelectronic technology platform for applications in the short-wave infrared (SWIR) to enable 3D imaging, LIDAR night vision, etc. in the consumer electronics and automotive markets. In order...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/402289 |
| Acceso en línea: | https://hdl.handle.net/2117/402289 https://dx.doi.org/10.1021/acsnano.3c12007 |
| Access Level: | acceso abierto |
| Palabra clave: | Optoelectronic devices Quantum dots Infrared detectors Optical detectors III-V Colloidal quantum dots InSb Photodetectors Short-wave infrared Dispositius optoelectrònics Punts quàntics Detectors de raigs infraroigs Detectors òptics Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica |
| Sumario: | Colloidal quantum dot (CQD) technology is considered the main contender toward a low-cost high-performance optoelectronic technology platform for applications in the short-wave infrared (SWIR) to enable 3D imaging, LIDAR night vision, etc. in the consumer electronics and automotive markets. In order to unleash the full potential of this technology, there is a need for a material that is environmentally friendly, thus RoHS compliant, and possesses adequate optoelectronic properties to deliver high-performance devices. InSb CQDs hold great potential in view of their RoHS-compliant nature and-in principle-facile access to the SWIR. However, to date progress in realizing high-performance optoelectronic devices, including photodetectors (PDs), has been limited. Here, we have developed a synthesis method for producing size-tunable InSb CQDs with distinct excitonic peaks spanning a wide range from 900 to 1750 nm. To passivate the surface defects and enhance the photoluminescence (PL) efficiency of InSb CQDs, we further designed an InSb/InP core–shell structure. By employing the InSb/InP core–shell CQDs in a photodiode device stack, we report on robust InSb CQD SWIR photodetectors that exhibit an external quantum efficiency (EQE) of 25% at 1240 nm, a wide linear dynamic range exceeding 128 dB, a photoresponse time of 70 ns, and a specific detectivity of 4.4 × 1011 jones. |
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