Defect and structural imperfection effects on the electronic properties of BiTeI surfaces

The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tun...

ver descrição completa

Detalhes bibliográficos
Autores: Fiedler, Sebastian, El-Kareh, Lydia, Eremeev, Sergey V., Tereshchenko, Oleg E., Seibel, Christoph, Lutz, Peter, Kokh, Konstantin A., Tchoulkov Savkin, Evgueni Vladimirovich, Kuznetsova, Tatyana V., Grebennikov, Vladimir I., Bentmann, Hendrik, Bode, Matthias, Reinert, Friedrich
Tipo de documento: artigo
Data de publicação:2014
País:España
Recursos:Universidad del País Vasco
Repositório:Addi. Archivo Digital para la Docencia y la Investigación
OAI Identifier:oai:addi.ehu.eus:10810/16331
Acesso em linha:http://hdl.handle.net/10810/16331
Access Level:Acceso aberto
Palavra-chave:electronic structure
spin-orbit coupling
surface morphology
semiconductor surfaces
augmented-wave method
insulator
dynamics
metals
phase
PHYSICS AND ASTRONOMY
Descrição
Resumo:The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas

Registros relacionados