Defect and structural imperfection effects on the electronic properties of BiTeI surfaces

The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tun...

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Bibliographic Details
Authors: Fiedler, Sebastian, El-Kareh, Lydia, Eremeev, Sergey V., Tereshchenko, Oleg E., Seibel, Christoph, Lutz, Peter, Kokh, Konstantin A., Tchoulkov Savkin, Evgueni Vladimirovich, Kuznetsova, Tatyana V., Grebennikov, Vladimir I., Bentmann, Hendrik, Bode, Matthias, Reinert, Friedrich
Format: article
Publication Date:2014
Country:España
Institution:Universidad del País Vasco
Repository:Addi. Archivo Digital para la Docencia y la Investigación
OAI Identifier:oai:addi.ehu.eus:10810/16331
Online Access:http://hdl.handle.net/10810/16331
Access Level:Open access
Keyword:electronic structure
spin-orbit coupling
surface morphology
semiconductor surfaces
augmented-wave method
insulator
dynamics
metals
phase
PHYSICS AND ASTRONOMY
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Summary:The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas

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