Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2

Fluorite ferroelectrics based on HfO2 and ZrO2 hold great potential for efficient memory devices. For these applications, it is of interest to control and maximize the remanent polarization. The literature shows a strong dispersion of polarization values for the same chemical composition. The measur...

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Autores: Lyu, Xueliang, Zou, Jingye, Ali, Faizan, Fina, Ignasi, Sánchez Barrera, Florencio
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/415273
Acceso en línea:http://hdl.handle.net/10261/415273
https://api.elsevier.com/content/abstract/scopus_id/105012597778
Access Level:acceso abierto
Palabra clave:Hf0.5Zr0.5O2
Electroresistance
Epitaxial films
Ferroelectric hafnia
Ferroelectric oxides
Hafnium oxide
Resistive switching
Zirconium oxide
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dc.title.none.fl_str_mv Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2
title Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2
spellingShingle Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2
Lyu, Xueliang
Hf0.5Zr0.5O2
Electroresistance
Epitaxial films
Ferroelectric hafnia
Ferroelectric oxides
Hafnium oxide
Resistive switching
Zirconium oxide
title_short Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2
title_full Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2
title_fullStr Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2
title_full_unstemmed Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2
title_sort Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2
dc.creator.none.fl_str_mv Lyu, Xueliang
Zou, Jingye
Ali, Faizan
Fina, Ignasi
Sánchez Barrera, Florencio
author Lyu, Xueliang
author_facet Lyu, Xueliang
Zou, Jingye
Ali, Faizan
Fina, Ignasi
Sánchez Barrera, Florencio
author_role author
author2 Zou, Jingye
Ali, Faizan
Fina, Ignasi
Sánchez Barrera, Florencio
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia e Innovación (España)
Ministerio de Ciencia, Innovación y Universidades (España)
Agencia Estatal de Investigación (España)
Generalitat de Catalunya
European Commission
China Scholarship Council
Sánchez Barrera, Florencio [0000-0002-5314-453X]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Hf0.5Zr0.5O2
Electroresistance
Epitaxial films
Ferroelectric hafnia
Ferroelectric oxides
Hafnium oxide
Resistive switching
Zirconium oxide
topic Hf0.5Zr0.5O2
Electroresistance
Epitaxial films
Ferroelectric hafnia
Ferroelectric oxides
Hafnium oxide
Resistive switching
Zirconium oxide
description Fluorite ferroelectrics based on HfO2 and ZrO2 hold great potential for efficient memory devices. For these applications, it is of interest to control and maximize the remanent polarization. The literature shows a strong dispersion of polarization values for the same chemical composition. The measured values can include distinct contributions, and indeed, HfO2 and ZrO2 present prominent ionic transport, in addition to electronic processes. This can cause the genuine ferroelectricity of fluorites to be superimposed on extrinsic contributions, leading to the erroneous estimation of polarization. This possibility has a major impact, as it can seriously affect the system's understanding, hampering progress. To disclose genuine ferroelectricity, a comprehensive study of hafnium and zirconium oxide films is conducted. High-quality epitaxial films are prepared with different Hf1-xZrxO2 compositions, ranging from HfO2 to ZrO2, and using different deposition parameters and substrate orientation to vary defects and interfaces. There is resistive switching, especially in ZrO2 films, which results in hysteretic current and induces a considerable overestimation of the polarization in films with high leakage current levels. It is demonstrated that a critical evaluation of extrinsic contributions is necessary, especially when abnormally shaped polarization loops or anomalously high polarization values are measured.
publishDate 2025
dc.date.none.fl_str_mv 2025
2026
2026
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status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/415273
https://api.elsevier.com/content/abstract/scopus_id/105012597778
url http://hdl.handle.net/10261/415273
https://api.elsevier.com/content/abstract/scopus_id/105012597778
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Small (Weinheim an der Bergstrasse, Germany)
http://doi.org/10.1002/smll.202506334
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dc.publisher.none.fl_str_mv Wiley-VCH
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spelling Intrinsic Ferroelectric Polarization in Doped HfO2 and ZrO2Lyu, XueliangZou, JingyeAli, FaizanFina, IgnasiSánchez Barrera, FlorencioHf0.5Zr0.5O2ElectroresistanceEpitaxial filmsFerroelectric hafniaFerroelectric oxidesHafnium oxideResistive switchingZirconium oxideFluorite ferroelectrics based on HfO2 and ZrO2 hold great potential for efficient memory devices. For these applications, it is of interest to control and maximize the remanent polarization. The literature shows a strong dispersion of polarization values for the same chemical composition. The measured values can include distinct contributions, and indeed, HfO2 and ZrO2 present prominent ionic transport, in addition to electronic processes. This can cause the genuine ferroelectricity of fluorites to be superimposed on extrinsic contributions, leading to the erroneous estimation of polarization. This possibility has a major impact, as it can seriously affect the system's understanding, hampering progress. To disclose genuine ferroelectricity, a comprehensive study of hafnium and zirconium oxide films is conducted. High-quality epitaxial films are prepared with different Hf1-xZrxO2 compositions, ranging from HfO2 to ZrO2, and using different deposition parameters and substrate orientation to vary defects and interfaces. There is resistive switching, especially in ZrO2 films, which results in hysteretic current and induces a considerable overestimation of the polarization in films with high leakage current levels. It is demonstrated that a critical evaluation of extrinsic contributions is necessary, especially when abnormally shaped polarization loops or anomalously high polarization values are measured.Grants PID2023-147211OB-C21, Severo Ochoa (CEX2023-001263-S), PDC2023-145874-I00, PID2020-112548RB-I00, TED2021-130453B-C21 and PID2019-107727RB-I00 funded by the Spanish Ministry of Science, Innovation and Universities (MCIN/AEI/10.13039/501100011033) were acknowledged. Grant 2021 SGR 00804 funded by Generalitat de Catalunya was also acknowledged. This work has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie Grant Agreement No 101168161 (MASAUTO European Training Networks). The authors acknowledge the assistance of the ICMAB-CSIC Scientific & Technical Services: Thin Films Laboratory (Raúl Solanas and Victor Castro) and X-Ray Diffraction Laboratory (Anna Crespi, Xavier Campos and Joan Esquius). X.L. was financially supported by China Scholarship Council (CSC) with No. 202206180011, and his work has been done as a part of his Ph.D. program in Materials Science at Universitat Autònoma de Barcelona.With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2023-001263-S).Peer reviewedWiley-VCHMinisterio de Ciencia e Innovación (España)Ministerio de Ciencia, Innovación y Universidades (España)Agencia Estatal de Investigación (España)Generalitat de CatalunyaEuropean CommissionChina Scholarship CouncilSánchez Barrera, Florencio [0000-0002-5314-453X]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202620262025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/415273https://api.elsevier.com/content/abstract/scopus_id/105012597778reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2023-147211OB-C21info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/CEX2023-001263-Sinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PDC2023-145874-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-112548RB-I00info:eu-repo/grantAgreement/MICINN/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/TED2021-130453B-C21info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-107727RB-I00info:eu-repo/grantAgreement/EC/H2020/101168161Small (Weinheim an der Bergstrasse, Germany)http://doi.org/10.1002/smll.202506334Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/4152732026-05-22T06:33:51Z
score 15,81155

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