Variability in Resistive Memories

Roldán, Juan B.; Miranda, Enrique; Maldonado, David; Mikhaylov, Alexey N.; Agudov, Nikolay V.; Dubkov, Alexander A.; Koryazhkina, Maria N.; González, Mireia B.; Villena, Marco A.; Poblador, Samuel; Saludes-Tapia, Mercedes; Picos, Rodrigo; Jiménez-Molinos, Francisco; Stavrinides, Stavros G.; Salvador, Emili; Alonso, Francisco J.; Campabadal, Francesca; Spagnolo, Bernardo; Lanza, Mario; Chua, Leon O.

Variability in Resistive Memories

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to...

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Autores:	Roldán, Juan B., Miranda, Enrique, Maldonado, David, Mikhaylov, Alexey N., Agudov, Nikolay V., Dubkov, Alexander A., Koryazhkina, Maria N., González, Mireia B., Villena, Marco A., Poblador, Samuel, Saludes-Tapia, Mercedes, Picos, Rodrigo, Jiménez-Molinos, Francisco, Stavrinides, Stavros G., Salvador, Emili, Alonso, Francisco J., Campabadal, Francesca, Spagnolo, Bernardo, Lanza, Mario, Chua, Leon O.
Tipo de recurso:	artículo
Estado:	Versión publicada
Fecha de publicación:	2023
País:	España
Institución:	Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:	DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:	oai:digital.csic.es:10261/347654
Acceso en línea:	http://hdl.handle.net/10261/347654 https://api.elsevier.com/content/abstract/scopus_id/85164343347
Access Level:	acceso abierto
Palabra clave:	2D materials \| experimental characterization \| memristor \| modeling \| resistive memory \| resistive switching \| variability

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spelling	Variability in Resistive MemoriesRoldán, Juan B.Miranda, EnriqueMaldonado, DavidMikhaylov, Alexey N.Agudov, Nikolay V.Dubkov, Alexander A.Koryazhkina, Maria N.González, Mireia B.Villena, Marco A.Poblador, SamuelSaludes-Tapia, MercedesPicos, RodrigoJiménez-Molinos, FranciscoStavrinides, Stavros G.Salvador, EmiliAlonso, Francisco J.Campabadal, FrancescaSpagnolo, BernardoLanza, MarioChua, Leon O.2D materials \| experimental characterization \| memristor \| modeling \| resistive memory \| resistive switching \| variabilityResistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to cope with the requirements of massive industrial production. However, the most important hurdle to progress in their development is the so-called cycle-to-cycle variability, which is inherently rooted in the resistive switching mechanism behind the operational principle of these devices. In order to achieve the whole picture, variability must be assessed from different viewpoints going from the experimental characterization to the adequation of modeling and simulation techniques. Herein, special emphasis is put on the modeling part because the accurate representation of the phenomenon is critical for circuit designers. In this respect, a number of approaches are used to the date: stochastic, behavioral, mesoscopic.., each of them covering particular aspects of the electron and ion transport mechanisms occurring within the switching material. These subjects are dealt with in this review, with the aim of presenting the most recent advancements in the treatment of variability in resistive memories.Peer reviewedWiley-BlackwellJunta de AndalucíaLobachevsky UniversityRussian GovernmentEuropean CommissionMinisterio de Ciencia, Innovación y Universidades (España)0000-0003-1662-6457Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202420242023info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_dcae04bcPublisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/347654https://api.elsevier.com/content/abstract/scopus_id/85164343347reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PGC2018-098860-B-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-128077NB-I00info:eu-repo/grantAgreement/MCIN/AEI/10.13039info:eu-repo/grantAgreement/A-FQM-66-UGR20//info:eu-repo/grantAgreement/RYC2020-030150-I//info:eu-repo/grantAgreement/Government Council on Grants, Russian Federation/074-02-2018-330/info:eu-repo/grantAgreement/Lobachevsky State University of Nizhny Novgorod/N-466-99_2021-2023/Advanced Intelligent Systemshttps://doi.org/10.1002/aisy.202200338Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3476542026-05-22T06:33:51Z
dc.title.none.fl_str_mv	Variability in Resistive Memories
title	Variability in Resistive Memories
spellingShingle	Variability in Resistive Memories Roldán, Juan B. 2D materials \| experimental characterization \| memristor \| modeling \| resistive memory \| resistive switching \| variability
title_short	Variability in Resistive Memories
title_full	Variability in Resistive Memories
title_fullStr	Variability in Resistive Memories
title_full_unstemmed	Variability in Resistive Memories
title_sort	Variability in Resistive Memories
dc.creator.none.fl_str_mv	Roldán, Juan B. Miranda, Enrique Maldonado, David Mikhaylov, Alexey N. Agudov, Nikolay V. Dubkov, Alexander A. Koryazhkina, Maria N. González, Mireia B. Villena, Marco A. Poblador, Samuel Saludes-Tapia, Mercedes Picos, Rodrigo Jiménez-Molinos, Francisco Stavrinides, Stavros G. Salvador, Emili Alonso, Francisco J. Campabadal, Francesca Spagnolo, Bernardo Lanza, Mario Chua, Leon O.
author	Roldán, Juan B.
author_facet	Roldán, Juan B. Miranda, Enrique Maldonado, David Mikhaylov, Alexey N. Agudov, Nikolay V. Dubkov, Alexander A. Koryazhkina, Maria N. González, Mireia B. Villena, Marco A. Poblador, Samuel Saludes-Tapia, Mercedes Picos, Rodrigo Jiménez-Molinos, Francisco Stavrinides, Stavros G. Salvador, Emili Alonso, Francisco J. Campabadal, Francesca Spagnolo, Bernardo Lanza, Mario Chua, Leon O.
author_role	author
author2	Miranda, Enrique Maldonado, David Mikhaylov, Alexey N. Agudov, Nikolay V. Dubkov, Alexander A. Koryazhkina, Maria N. González, Mireia B. Villena, Marco A. Poblador, Samuel Saludes-Tapia, Mercedes Picos, Rodrigo Jiménez-Molinos, Francisco Stavrinides, Stavros G. Salvador, Emili Alonso, Francisco J. Campabadal, Francesca Spagnolo, Bernardo Lanza, Mario Chua, Leon O.
author2_role	author author author author author author author author author author author author author author author author author author author
dc.contributor.none.fl_str_mv	Junta de Andalucía Lobachevsky University Russian Government European Commission Ministerio de Ciencia, Innovación y Universidades (España) 0000-0003-1662-6457 Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv	2D materials \| experimental characterization \| memristor \| modeling \| resistive memory \| resistive switching \| variability
topic	2D materials \| experimental characterization \| memristor \| modeling \| resistive memory \| resistive switching \| variability
description	Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to cope with the requirements of massive industrial production. However, the most important hurdle to progress in their development is the so-called cycle-to-cycle variability, which is inherently rooted in the resistive switching mechanism behind the operational principle of these devices. In order to achieve the whole picture, variability must be assessed from different viewpoints going from the experimental characterization to the adequation of modeling and simulation techniques. Herein, special emphasis is put on the modeling part because the accurate representation of the phenomenon is critical for circuit designers. In this respect, a number of approaches are used to the date: stochastic, behavioral, mesoscopic.., each of them covering particular aspects of the electron and ion transport mechanisms occurring within the switching material. These subjects are dealt with in this review, with the aim of presenting the most recent advancements in the treatment of variability in resistive memories.
publishDate	2023
dc.date.none.fl_str_mv	2023 2024 2024
dc.type.none.fl_str_mv	info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_dcae04bc Publisher's version info:eu-repo/semantics/publishedVersion
format	article
status_str	publishedVersion
dc.identifier.none.fl_str_mv	http://hdl.handle.net/10261/347654 https://api.elsevier.com/content/abstract/scopus_id/85164343347
url	http://hdl.handle.net/10261/347654 https://api.elsevier.com/content/abstract/scopus_id/85164343347
dc.language.none.fl_str_mv	Inglés
language_invalid_str_mv	Inglés
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dc.rights.none.fl_str_mv	info:eu-repo/semantics/openAccess
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dc.publisher.none.fl_str_mv	Wiley-Blackwell
publisher.none.fl_str_mv	Wiley-Blackwell
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Variability in Resistive Memories

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