A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-s...

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Autores: Kaufmann, Ivan Rodrigo, Zerey, Onur, Meyers, Thorsten, Reker, Julia, Vidor, Fábio Fedrizzi, Hilleringmann, Ulrich
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2021
País:Brasil
Institución:Universidade Federal do Rio Grande do Sul (UFRGS)
Repositorio:Repositório Institucional da UFRGS
Idioma:inglés
OAI Identifier:oai:www.lume.ufrgs.br:10183/230912
Acceso en línea:http://hdl.handle.net/10183/230912
Access Level:acceso abierto
Palabra clave:Transistores de filmes finos
Eletrônica flexível
Nanopartículas de óxido de zinco
Thin film transistors
Flexible electronics
Zinc oxide nanoparticles
Metal-semiconductor metal
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spelling 2021-10-19T04:23:32Z20212079-4991http://hdl.handle.net/10183/230912001131909Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.application/pdfengNanomaterials [recurso eletrônico]. Basel, Switzerland : MDPI, 2021. Vol. 11, n. 5 (2021), e1188, 11 p.Transistores de filmes finosEletrônica flexívelNanopartículas de óxido de zincoThin film transistorsFlexible electronicsZinc oxide nanoparticlesMetal-semiconductor metalA Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics ApplicationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSKaufmann, Ivan RodrigoZerey, OnurMeyers, ThorstenReker, JuliaVidor, Fábio FedrizziHilleringmann, UlrichTEXT001131909.pdf.txt001131909.pdf.txtExtracted Texttext/plain41700http://www.lume.ufrgs.br/bitstream/10183/230912/2/001131909.pdf.txta0b74f05d835cf5d9eb197169dda242cMD52ORIGINAL001131909.pdfTexto completo (inglês)application/pdf1179672http://www.lume.ufrgs.br/bitstream/10183/230912/1/001131909.pdff0829309286d5eb753e5c236bdf53ae5MD5110183/2309122021-11-20 06:18:25.173397oai:www.lume.ufrgs.br:10183/230912Repositório InstitucionalPUBhttps://lume.ufrgs.br/oai/requestlume@ufrgs.bropendoar:2021-11-20T08:18:25Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
title A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
spellingShingle A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
Kaufmann, Ivan Rodrigo
Transistores de filmes finos
Eletrônica flexível
Nanopartículas de óxido de zinco
Thin film transistors
Flexible electronics
Zinc oxide nanoparticles
Metal-semiconductor metal
title_short A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
title_full A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
title_fullStr A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
title_full_unstemmed A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
title_sort A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
dc.creator.none.fl_str_mv Kaufmann, Ivan Rodrigo
Zerey, Onur
Meyers, Thorsten
Reker, Julia
Vidor, Fábio Fedrizzi
Hilleringmann, Ulrich
author Kaufmann, Ivan Rodrigo
author_facet Kaufmann, Ivan Rodrigo
Zerey, Onur
Meyers, Thorsten
Reker, Julia
Vidor, Fábio Fedrizzi
Hilleringmann, Ulrich
author_role author
author2 Zerey, Onur
Meyers, Thorsten
Reker, Julia
Vidor, Fábio Fedrizzi
Hilleringmann, Ulrich
author2_role author
author
author
author
author
dc.subject.por.fl_str_mv Transistores de filmes finos
Eletrônica flexível
Nanopartículas de óxido de zinco
topic Transistores de filmes finos
Eletrônica flexível
Nanopartículas de óxido de zinco
Thin film transistors
Flexible electronics
Zinc oxide nanoparticles
Metal-semiconductor metal
dc.subject.eng.fl_str_mv Thin film transistors
Flexible electronics
Zinc oxide nanoparticles
Metal-semiconductor metal
description Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.
publishDate 2021
dc.date.accessioned.fl_str_mv 2021-10-19T04:23:32Z
dc.date.issued.fl_str_mv 2021
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/230912
dc.identifier.issn.pt_BR.fl_str_mv 2079-4991
dc.identifier.nrb.pt_BR.fl_str_mv 001131909
identifier_str_mv 2079-4991
001131909
url http://hdl.handle.net/10183/230912
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Nanomaterials [recurso eletrônico]. Basel, Switzerland : MDPI, 2021. Vol. 11, n. 5 (2021), e1188, 11 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/230912/2/001131909.pdf.txt
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