Cita APA

Kaufmann, I. R., Zerey, O., Meyers, T., Reker, J., Vidor, F. F., & Hilleringmann, U. (2021). A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application.

Citación estilo Chicago

Kaufmann, Ivan Rodrigo, Onur Zerey, Thorsten Meyers, Julia Reker, Fábio Fedrizzi Vidor, y Ulrich Hilleringmann. A Study About Schottky Barrier Height and Ideality Factor in Thin Film Transistors With Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application. 2021.

Cita MLA

Kaufmann, Ivan Rodrigo, et al. A Study About Schottky Barrier Height and Ideality Factor in Thin Film Transistors With Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application. 2021.