Reflectivity in Bragg Mirrors of AlGaAsSb/AlAsSb on InP
The reflectivity of a Bragg mirror composed by materials of the antimony family (AlGaAsSb/AlAsSb), doped with tellurium, is analyzed in this work. The sample was prepared by molecular beam epitaxy (MBE) and the reflectivity was measured by Fourier Transform Infra-Red Spectroscopy (FTIR). In order to...
| Autores: | , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2004 |
| País: | Brasil |
| Institución: | Universidade Estadual de Londrina (UEL) |
| Repositorio: | Revista Semina: Ciências Exatas e Tecnológicas (Online) |
| Idioma: | portugués |
| OAI Identifier: | oai:ojs2.ojs.uel.br:article/1548 |
| Acceso en línea: | https://ojs.uel.br/revistas/uel/index.php/semexatas/article/view/1548 |
| Access Level: | acceso abierto |
| Palabra clave: | Semiconductors Reflectance Bragg mirror AlGaAsSb AlAsSb. Semicondutores Refletividade Espelho de Bragg Semicondutor |
| Sumario: | The reflectivity of a Bragg mirror composed by materials of the antimony family (AlGaAsSb/AlAsSb), doped with tellurium, is analyzed in this work. The sample was prepared by molecular beam epitaxy (MBE) and the reflectivity was measured by Fourier Transform Infra-Red Spectroscopy (FTIR). In order to discuss the Bragg mirror properties, the experimental reflectivity is compared to a simulation of the reflectivity based on the matrix formalism. |
|---|