Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells
III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. I...
| Autores: | , , , , , , , , , , , , |
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| Formato: | artículo |
| Estado: | Versión enviada para evaluación y publicación |
| Fecha de publicación: | 2021 |
| País: | España |
| Recursos: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:10459.1/72829 |
| Acesso em linha: | https://doi.org/10.1016/j.solmat.2020.110795 http://hdl.handle.net/10459.1/72829 |
| Access Level: | acceso abierto |
| Palavra-chave: | GaSb AlInAsSb III-Sb alloys Tandem cells |
| Resumo: | III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. In this work, the behavior of two AlInAsSb/GaSb tandem photovoltaic cells is studied. Material characterization and physics-based 1D modeling are carried out to analyze and discuss performance of the cells. An efficiency of 5.2% is achieved under 1-sun illumination, limited by the AlInAsSb quaternary-alloy properties. |
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