Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation

A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are imp...

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Autores: Souza, Joel Pereira de, Sadana, Devendra K.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1993
País:Brasil
Institución:Universidade Federal do Rio Grande do Sul (UFRGS)
Repositorio:Repositório Institucional da UFRGS
Idioma:inglés
OAI Identifier:oai:www.lume.ufrgs.br:10183/179258
Acceso en línea:http://hdl.handle.net/10183/179258
Access Level:acceso abierto
Palabra clave:Física da matéria condensada
Arseneto de galio
Implantação de íons
Semicondutores
Silício
Alumínio
Dopagem de semicondutores
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spelling 2018-06-09T03:34:31Z19930003-6951http://hdl.handle.net/10183/179258000056942A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of 91 X 1013 cme2, and subsequent annealing of the co-implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski-grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.application/pdfengApplied physics letters. New York. Vol. 63, n. 23 (Dec. 1993), p. 3200-3202Física da matéria condensadaArseneto de galioImplantação de íonsSemicondutoresSilícioAlumínioDopagem de semicondutoresMechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSSouza, Joel Pereira deSadana, Devendra K.ORIGINAL000056942.pdf000056942.pdfTexto completo (inglês)application/pdf658023http://www.lume.ufrgs.br/bitstream/10183/179258/1/000056942.pdf15bba7a94f6daf8d629c5b3a6400ec79MD51TEXT000056942.pdf.txt000056942.pdf.txtExtracted Texttext/plain13480http://www.lume.ufrgs.br/bitstream/10183/179258/2/000056942.pdf.txtdafb3ae1f9959ed761d51e6cb9808261MD5210183/1792582022-02-22 05:13:19.370989oai:www.lume.ufrgs.br:10183/179258Repositório InstitucionalPUBhttps://lume.ufrgs.br/oai/requestlume@ufrgs.bropendoar:2022-02-22T08:13:19Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
spellingShingle Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
Souza, Joel Pereira de
Física da matéria condensada
Arseneto de galio
Implantação de íons
Semicondutores
Silício
Alumínio
Dopagem de semicondutores
title_short Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title_full Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title_fullStr Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title_full_unstemmed Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title_sort Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
dc.creator.none.fl_str_mv Souza, Joel Pereira de
Sadana, Devendra K.
author Souza, Joel Pereira de
author_facet Souza, Joel Pereira de
Sadana, Devendra K.
author_role author
author2 Sadana, Devendra K.
author2_role author
dc.subject.por.fl_str_mv Física da matéria condensada
Arseneto de galio
Implantação de íons
Semicondutores
Silício
Alumínio
Dopagem de semicondutores
topic Física da matéria condensada
Arseneto de galio
Implantação de íons
Semicondutores
Silício
Alumínio
Dopagem de semicondutores
description A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of 91 X 1013 cme2, and subsequent annealing of the co-implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski-grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.
publishDate 1993
dc.date.issued.fl_str_mv 1993
dc.date.accessioned.fl_str_mv 2018-06-09T03:34:31Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/179258
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000056942
identifier_str_mv 0003-6951
000056942
url http://hdl.handle.net/10183/179258
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 63, n. 23 (Dec. 1993), p. 3200-3202
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eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
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