Electrical resistivity of acceptor carbon in GaAs
The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm-³. Good agreement was obtained between the measured resistivities and resistivities calculated by...
| Autores: | , , , , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2004 |
| País: | Brasil |
| Recursos: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repositorio: | Repositório Institucional da UFRGS |
| Idioma: | inglés |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/95830 |
| Acesso em linha: | http://hdl.handle.net/10183/95830 |
| Access Level: | acceso abierto |
| Palavra-chave: | Carbono Resistividade elétrica Arseneto de galio Semicondutores iii-v Implantacao ionica Transição metal isolante Dopagem de semicondutores |
| Resumo: | The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm-³. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach at similar temperatures and doping concentrations. The critical impurity concentration for the metal–nonmetal transition was found to be about 1018 cm-³. |
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