An MOS transistor model for analog circuit design

Acesso Aberto

Detalles Bibliográficos
Autores: Cunha, Ana Isabela Araújo, Schneider, Marcio Cherem, Galup Montoro, Carlos
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1998
País:Brasil
Institución:Universidade Federal da Bahia (UFBA)
Repositorio:Repositório Institucional da UFBA
Idioma:inglés
OAI Identifier:oai:repositorio.ufba.br:ri/8148
Acceso en línea:http://www.repositorio.ufba.br/ri/handle/ri/8148
Access Level:acceso abierto
Palabra clave:Circuit modelin
integrated circuit design
MOS analog integrated circuits
MOS devices
id BR_ca480d8ddf2b139b64ff28ad0dfddc13
oai_identifier_str oai:repositorio.ufba.br:ri/8148
network_acronym_str BR
network_name_str Brasil
repository_id_str
dc.title.pt_BR.fl_str_mv An MOS transistor model for analog circuit design
dc.title.alternative.pt_BR.fl_str_mv IEEE Journal of Solid-State Circuits
title An MOS transistor model for analog circuit design
spellingShingle An MOS transistor model for analog circuit design
Cunha, Ana Isabela Araújo
Circuit modelin
integrated circuit design
MOS analog integrated circuits
MOS devices
title_short An MOS transistor model for analog circuit design
title_full An MOS transistor model for analog circuit design
title_fullStr An MOS transistor model for analog circuit design
title_full_unstemmed An MOS transistor model for analog circuit design
title_sort An MOS transistor model for analog circuit design
dc.creator.none.fl_str_mv Cunha, Ana Isabela Araújo
Schneider, Marcio Cherem
Galup Montoro, Carlos
Cunha, Ana Isabela Araújo
Schneider, Marcio Cherem
Galup Montoro, Carlos
author Cunha, Ana Isabela Araújo
author_facet Cunha, Ana Isabela Araújo
Schneider, Marcio Cherem
Galup Montoro, Carlos
author_role author
author2 Schneider, Marcio Cherem
Galup Montoro, Carlos
author2_role author
author
dc.subject.por.fl_str_mv Circuit modelin
integrated circuit design
MOS analog integrated circuits
MOS devices
topic Circuit modelin
integrated circuit design
MOS analog integrated circuits
MOS devices
description Acesso Aberto
publishDate 1998
dc.date.issued.fl_str_mv 1998
dc.date.accessioned.fl_str_mv 2013-01-25T12:13:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/8148
dc.identifier.issn.none.fl_str_mv 0018-9200
dc.identifier.number.pt_BR.fl_str_mv v. 33, n. 10
identifier_str_mv 0018-9200
v. 33, n. 10
url http://www.repositorio.ufba.br/ri/handle/ri/8148
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.pt_BR.fl_str_mv http://dx.doi.org/10.1109/4.720397
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFBA
instname:Universidade Federal da Bahia (UFBA)
instacron:UFBA
instname_str Universidade Federal da Bahia (UFBA)
instacron_str UFBA
institution UFBA
reponame_str Repositório Institucional da UFBA
collection Repositório Institucional da UFBA
bitstream.url.fl_str_mv https://repositorio.ufba.br/bitstream/ri/8148/1/Cunha.pdf
https://repositorio.ufba.br/bitstream/ri/8148/2/license.txt
https://repositorio.ufba.br/bitstream/ri/8148/3/Cunha.pdf.txt
bitstream.checksum.fl_str_mv d553ef47764ff7358568970f4f62f210
1b89a9a0548218172d7c829f87a0eab9
d89dbaf7f921916591e49a26e5b5b16d
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)
repository.mail.fl_str_mv repositorio@ufba.br
_version_ 1853668757959868416
spelling 2013-01-25T12:13:00Z19980018-9200http://www.repositorio.ufba.br/ri/handle/ri/8148v. 33, n. 10Acesso AbertoThis paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.http://dx.doi.org/10.1109/4.720397reponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBACircuit modelinintegrated circuit designMOS analog integrated circuitsMOS devicesAn MOS transistor model for analog circuit designIEEE Journal of Solid-State Circuitsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10000-01-01enginfo:eu-repo/semantics/openAccessCunha, Ana Isabela AraújoSchneider, Marcio CheremGalup Montoro, CarlosCunha, Ana Isabela AraújoSchneider, Marcio CheremGalup Montoro, CarlosORIGINALCunha.pdfCunha.pdfapplication/pdf289468https://repositorio.ufba.br/bitstream/ri/8148/1/Cunha.pdfd553ef47764ff7358568970f4f62f210MD51open accessLICENSElicense.txtlicense.txttext/plain1762https://repositorio.ufba.br/bitstream/ri/8148/2/license.txt1b89a9a0548218172d7c829f87a0eab9MD52open accessTEXTCunha.pdf.txtCunha.pdf.txtExtracted texttext/plain31270https://repositorio.ufba.br/bitstream/ri/8148/3/Cunha.pdf.txtd89dbaf7f921916591e49a26e5b5b16dMD53metadata only accessri/81482025-09-02 10:23:45.257open accessoai:repositorio.ufba.br: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Repositório InstitucionalPUBhttps://repositorio.ufba.br/oai/requestrepositorio@ufba.bropendoar:19322025-09-02T13:23:45Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
score 15,301603

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