Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems

Fernandez, J. R. L.; Araújo, Carlos Moysés; Silva, A. Ferreira da; Leite, J. R.; Sernelius, Bo E.; Pepe, Iuri Muniz

Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems

Texto completo: acesso restrito. p. 420–427

Detalhes bibliográficos
Autores:	Fernandez, J. R. L., Araújo, Carlos Moysés, Silva, A. Ferreira da, Leite, J. R., Sernelius, Bo E., Pepe, Iuri Muniz
Tipo de documento:	artigo
Estado:	Versão publicada
Data de publicação:	2001
País:	Brasil
Recursos:	Universidade Federal da Bahia (UFBA)
Repositório:	Repositório Institucional da UFBA
Idioma:	inglês
OAI Identifier:	oai:repositorio.ufba.br:ri/7671
Acesso em linha:	http://www.repositorio.ufba.br/ri/handle/ri/7671
Access Level:	Acceso aberto
Palavra-chave:	A1. Characterization A1. Doping A3. Molecular beam epitaxy B1. Nitrides

Descrição
Resumo:	Texto completo: acesso restrito. p. 420–427

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Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems

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