Unveiling photoluminescent response of Ce-doped CaCu3Ti4O12: An experimental-theoretical approach
CaCu3Ti4O12: x% Ce (x = 0.00, 0.25, 0.50, 0.75, and 1.00) ceramic composites were prepared via solid-state reaction. Theoretical atomistic simulations were combined with experimental techniques to uncover Ce effects in the (micro)structure and photoluminescence of CaCu3Ti4O12-based ceramics. Applica...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2022 |
| País: | Brasil |
| Institución: | Universidade Estadual Paulista (UNESP) |
| Repositorio: | Repositório Institucional da UNESP |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.unesp.br:11449/242058 |
| Acceso en línea: | http://dx.doi.org/10.1016/j.jallcom.2022.166185 http://hdl.handle.net/11449/242058 |
| Access Level: | acceso abierto |
| Palabra clave: | CaCu3Ti4O12 Ce-doped Computing simulations Optoelectronics Photoluminescence |
| Sumario: | CaCu3Ti4O12: x% Ce (x = 0.00, 0.25, 0.50, 0.75, and 1.00) ceramic composites were prepared via solid-state reaction. Theoretical atomistic simulations were combined with experimental techniques to uncover Ce effects in the (micro)structure and photoluminescence of CaCu3Ti4O12-based ceramics. Application of perovskites ceramics in optoelectronics have been limited by their specific, narrow emission range, which compromise operational efficiency, pushing for the development of novel perovskite-emissive materials. This study results confirm that Ce ions are incorporated at Ca sites within the CaCu3Ti4O12 lattice, inducing point metal and oxygen vacancies in the optical bandgap region. Shallow-level defects (VCa′′/VO⦁⦁) were associated with broadband violet-blue photoluminescent (PL) emissions. Better color rendering may be a direct consequence of crystalline field splitting/wider PL emission. Furthermore, results demonstrate that PL on CaCu3Ti4O12: Ce system intensity can be modulated by structural defects, making it promising for applications in optoelectronics. |
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