Sequential phase formation by ion-induced epitaxy in fe-implanted si(001)
Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a s...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1995 |
| País: | Brasil |
| Institución: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repositorio: | Repositório Institucional da UFRGS |
| Idioma: | inglés |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/95401 |
| Acceso en línea: | http://hdl.handle.net/10183/95401 |
| Access Level: | acceso abierto |
| Palabra clave: | Física da matéria condensada Ferro : Epitaxia Bombardeamento de ions Crescimento epitaxial Implantação de íons |
| Sumario: | Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of y-FeSi2, α-FeSi2 and βFeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the y-a and α -β phase transitions were determined as ≈ 11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases. |
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