Low-temperature ion-induced epitaxial growth of alfa-FeSi2 and cubic FeSi2 in Si
Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford backscattering spectrometry. Both cubic FeSi, and a-FeSi, were formed in epit...
| Authors: | , , , , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 1993 |
| Country: | Brasil |
| Institution: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repository: | Repositório Institucional da UFRGS |
| Language: | English |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/140557 |
| Online Access: | http://hdl.handle.net/10183/140557 |
| Access Level: | Open access |
| Keyword: | Física da matéria condensada Retroespalhamento rutherford Implantação de íons Espectrometria |
| Summary: | Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford backscattering spectrometry. Both cubic FeSi, and a-FeSi, were formed in epitaxy with the Si matrix with two types of orientations (fully aligned and twinned). The twins of a-FeSi, and those of cubic FeSi, were found to have exactly the same type of epitaxial relationship as for the aligned ones. The thermodynamically stable /3-FeS& is not formed, demonstrating that ion-beam-induced crystallization can lead to preferential phase formation as well as to epitaxy. |
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