Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films

Different types of doping incorporated to tin dioxide (SnO2) have been reported in order to control its bandgap aiming optoelectronic applications, such as transparent electrodes, solar cells and displays. In this work, the doping of SnO2 with lead in the oxidation state 2+ (Pb2 +) is investigated,...

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Detalles Bibliográficos
Autores: dos Santos, Stevan B.O. [UNESP], Boratto, Miguel H. [UNESP], Ramos, Roberto A. [UNESP], Scalvi, Luis V.A. [UNESP]
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2022
País:Brasil
Institución:Universidade Estadual Paulista (UNESP)
Repositorio:Repositório Institucional da UNESP
Idioma:inglés
OAI Identifier:oai:repositorio.unesp.br:11449/223083
Acceso en línea:http://dx.doi.org/10.1016/j.matchemphys.2021.125571
http://hdl.handle.net/11449/223083
Access Level:acceso abierto
Palabra clave:Bandgap engineering
Capture energy
Pb2+ doped SnO2
Persistent photoconductivity
Urbach energy
id BR_3e5e862f3bd2fcd5d2d1c24a2c4db3e2
oai_identifier_str oai:repositorio.unesp.br:11449/223083
network_acronym_str BR
network_name_str Brasil
repository_id_str
spelling Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin filmsBandgap engineeringCapture energyPb2+ doped SnO2Persistent photoconductivityUrbach energyDifferent types of doping incorporated to tin dioxide (SnO2) have been reported in order to control its bandgap aiming optoelectronic applications, such as transparent electrodes, solar cells and displays. In this work, the doping of SnO2 with lead in the oxidation state 2+ (Pb2 +) is investigated, in conjunction with the influence on the optical and electro-optical properties of thin films, deposited by sol-gel-dip-coating. It was observed that for an insertion up to 25 at% of lead, there is no formation of a secondary crystalline phase beyond the rutile phase of SnO2. Optical characterization data indicate two behavior tendencies: for doping level up to 1 at%, Pb2+ enters preferentially as interstitial impurity, whereas for higher doping it enters substitutional to Sn4+. For doping up to 1 at% the bandgap increases due to the Burnstein-Moss effect, in addition to a decrease in the capture energy for metastably photoexcited electrons. On the other hand, for doping above 1 at%, there is an increase in the Urbach energy, shifting the energy level of the valence band, leading to a decrease in the bandgap from 3.45 to 2.89 eV, which shows potential applicability in bandgap engineering. The higher doping level also increases the capture energy for photoexcited electrons and gives rise to the persistent photoconductivity effect at low temperatures, related to a large lattice relaxation around the dominant photoexcited defect.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)POSMAT – Post-Graduate Program in Materials Science and Technology School Of Sciences São Paulo State University (UNESP)Department of Physics School of Sciences São Paulo State University (UNESP)POSMAT – Post-Graduate Program in Materials Science and Technology School Of Sciences São Paulo State University (UNESP)Department of Physics School of Sciences São Paulo State University (UNESP)FAPESP: 2017/20809-0FAPESP: 2018/25241-4Universidade Estadual Paulista (UNESP)2022-04-28T19:48:28Z2022-04-28T19:48:28Z2022-02-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.matchemphys.2021.125571Materials Chemistry and Physics, v. 278.0254-0584http://hdl.handle.net/11449/22308310.1016/j.matchemphys.2021.1255712-s2.0-85121464367Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Chemistry and Physicsinfo:eu-repo/semantics/openAccessdos Santos, Stevan B.O. [UNESP]Boratto, Miguel H. [UNESP]Ramos, Roberto A. [UNESP]Scalvi, Luis V.A. [UNESP]2025-06-24T05:25:31Zoai:repositorio.unesp.br:11449/223083Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462025-06-24T05:25:31Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films
title Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films
spellingShingle Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films
dos Santos, Stevan B.O. [UNESP]
Bandgap engineering
Capture energy
Pb2+ doped SnO2
Persistent photoconductivity
Urbach energy
title_short Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films
title_full Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films
title_fullStr Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films
title_full_unstemmed Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films
title_sort Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films
dc.creator.none.fl_str_mv dos Santos, Stevan B.O. [UNESP]
Boratto, Miguel H. [UNESP]
Ramos, Roberto A. [UNESP]
Scalvi, Luis V.A. [UNESP]
author dos Santos, Stevan B.O. [UNESP]
author_facet dos Santos, Stevan B.O. [UNESP]
Boratto, Miguel H. [UNESP]
Ramos, Roberto A. [UNESP]
Scalvi, Luis V.A. [UNESP]
author_role author
author2 Boratto, Miguel H. [UNESP]
Ramos, Roberto A. [UNESP]
Scalvi, Luis V.A. [UNESP]
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
dc.subject.por.fl_str_mv Bandgap engineering
Capture energy
Pb2+ doped SnO2
Persistent photoconductivity
Urbach energy
topic Bandgap engineering
Capture energy
Pb2+ doped SnO2
Persistent photoconductivity
Urbach energy
description Different types of doping incorporated to tin dioxide (SnO2) have been reported in order to control its bandgap aiming optoelectronic applications, such as transparent electrodes, solar cells and displays. In this work, the doping of SnO2 with lead in the oxidation state 2+ (Pb2 +) is investigated, in conjunction with the influence on the optical and electro-optical properties of thin films, deposited by sol-gel-dip-coating. It was observed that for an insertion up to 25 at% of lead, there is no formation of a secondary crystalline phase beyond the rutile phase of SnO2. Optical characterization data indicate two behavior tendencies: for doping level up to 1 at%, Pb2+ enters preferentially as interstitial impurity, whereas for higher doping it enters substitutional to Sn4+. For doping up to 1 at% the bandgap increases due to the Burnstein-Moss effect, in addition to a decrease in the capture energy for metastably photoexcited electrons. On the other hand, for doping above 1 at%, there is an increase in the Urbach energy, shifting the energy level of the valence band, leading to a decrease in the bandgap from 3.45 to 2.89 eV, which shows potential applicability in bandgap engineering. The higher doping level also increases the capture energy for photoexcited electrons and gives rise to the persistent photoconductivity effect at low temperatures, related to a large lattice relaxation around the dominant photoexcited defect.
publishDate 2022
dc.date.none.fl_str_mv 2022-04-28T19:48:28Z
2022-04-28T19:48:28Z
2022-02-15
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.matchemphys.2021.125571
Materials Chemistry and Physics, v. 278.
0254-0584
http://hdl.handle.net/11449/223083
10.1016/j.matchemphys.2021.125571
2-s2.0-85121464367
url http://dx.doi.org/10.1016/j.matchemphys.2021.125571
http://hdl.handle.net/11449/223083
identifier_str_mv Materials Chemistry and Physics, v. 278.
0254-0584
10.1016/j.matchemphys.2021.125571
2-s2.0-85121464367
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Materials Chemistry and Physics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv repositoriounesp@unesp.br
_version_ 1853671788973654016
score 15,301629

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