Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates
Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large...
| Autores: | , , , , |
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| Tipo de documento: | artigo |
| Estado: | Versão publicada |
| Data de publicação: | 2011 |
| País: | Brasil |
| Recursos: | Universidade Estadual Paulista (UNESP) |
| Repositório: | Repositório Institucional da UNESP |
| Idioma: | inglês |
| OAI Identifier: | oai:repositorio.unesp.br:11449/42526 |
| Acesso em linha: | http://dx.doi.org/10.1016/j.jallcom.2010.12.184 http://hdl.handle.net/11449/42526 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Thin films Dielectrics Chemical synthesis X-ray diffraction |
| Resumo: | Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. (C) 2011 Elsevier B.V. All rights reserved. |
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