Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates
Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large...
| Authors: | , , , , |
|---|---|
| Format: | article |
| Status: | Published version |
| Publication Date: | 2011 |
| Country: | Brasil |
| Institution: | Universidade Estadual Paulista (UNESP) |
| Repository: | Repositório Institucional da UNESP |
| Language: | English |
| OAI Identifier: | oai:repositorio.unesp.br:11449/42526 |
| Online Access: | http://dx.doi.org/10.1016/j.jallcom.2010.12.184 http://hdl.handle.net/11449/42526 |
| Access Level: | Open access |
| Keyword: | Thin films Dielectrics Chemical synthesis X-ray diffraction |
| Summary: | Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. (C) 2011 Elsevier B.V. All rights reserved. |
|---|