3-D TCAD Monte Carlo device simulator : state-of-the-art FinFET simulation
This work presents a comprehensive description of an in-house 3D Monte Carlo device simulator for physical mod-eling of FinFETs. The simulator was developed to consider var-iability effects properly and to be able to study deeply scaled devices operating in the ballistic and quasi-ballistic regimes....
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2021 |
| País: | Brasil |
| Institución: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repositorio: | Repositório Institucional da UFRGS |
| Idioma: | inglés |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/259752 |
| Acceso en línea: | http://hdl.handle.net/10183/259752 |
| Access Level: | acceso abierto |
| Palabra clave: | Simulação computacional Transistores de efeito de campo TCAD simulation Monte Carlo method Fin-FETs |
| Sumario: | This work presents a comprehensive description of an in-house 3D Monte Carlo device simulator for physical mod-eling of FinFETs. The simulator was developed to consider var-iability effects properly and to be able to study deeply scaled devices operating in the ballistic and quasi-ballistic regimes. The impact of random dopants and trapped charges in the die-lectric is considered by treating electron-electron and electron-ion interactions in real-space. Metal gate granularity is in-cluded through the gate work functionvariation. The capability to evaluate these effects in nanometer3D devices makes the pre-sented simulator unique, thus advancing the state-of-the-art. The phonon scattering mechanisms, used to model the transport of electrons in puresilicon material system, were validated by comparing simulated drift velocities withavailable experi-mental data. The proper behavior of the device simulator is dis-played in a series of studies of the electric potentialin the device, the electron density, the carrier's energy and velocity, and the Id-Vg and Id-Vd curves. |
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