Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN par...
| Autores: | , , , , , , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2016 |
| País: | Brasil |
| Recursos: | Universidade Estadual Paulista (UNESP) |
| Repositorio: | Repositório Institucional da UNESP |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.unesp.br:11449/159109 |
| Acesso em linha: | http://dx.doi.org/10.1109/TED.2016.2598288 http://hdl.handle.net/11449/159109 |
| Access Level: | acceso abierto |
| Palavra-chave: | Ge pFinFET low-frequency noise (LFN) shallow trench isolation (STI) first STI last |
| Resumo: | An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN parameters, hole mobility and threshold voltage, is also evaluated. The carrier number fluctuation (Delta N) model is confirmed as dominant mechanism for all studied Ge pFinFETs and there is no correlation with the used STI process. From the LFN, it is evidenced that the Coulomb scattering mobility mechanism plays an important role for STI-first process, resulting in a mobility degradation. |
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