Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type...
| Autores: | , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2008 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/82041 |
| Acceso en línea: | http://hdl.handle.net/11336/82041 |
| Access Level: | acceso abierto |
| Palabra clave: | Bismuth Molybdates Electrical Transport Oxygen Ionic Conduction Photoconductivity https://purl.org/becyt/ford/1.4 https://purl.org/becyt/ford/1 |
| Sumario: | The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction. |
|---|