Evolution of the quadrupole hyperfine interaction while milling a Si-HfO2? blend Original Research Article
As HfO2 appears as a good candidate to replace SiO2 in Si complementary metal-oxide-semiconductor devices, a refined knowledge of the possible solid-state reactions between Si and HfO2 is valuable. Being the Perturbed Angular Correlations technique a very sensitive method to detect small changes in...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2012 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/20082 |
| Acceso en línea: | http://hdl.handle.net/11336/20082 |
| Access Level: | acceso abierto |
| Palabra clave: | Oxide Materials Mechanical Alloying Hyperfine Interaccions Perturbed Angular Correlation Pac https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | As HfO2 appears as a good candidate to replace SiO2 in Si complementary metal-oxide-semiconductor devices, a refined knowledge of the possible solid-state reactions between Si and HfO2 is valuable. Being the Perturbed Angular Correlations technique a very sensitive method to detect small changes in solid state, the goal of this work is to follow the different stages that occur while ball milling a blend Si-HfO2 by inspecting the hyperfine quadrupole interaction at Hf sites. The characterization is complemented by X-ray diffraction analysis. For comparison, a similar study on pure m-HfO2 is carried out. The results seem to reveal a gradual incorporation of Si in a tetragonal defective phase of hafnia with milling time. In addition, the formation of precursor arrays of the HfSiO4 structure takes place. After an annealing at 1000 °C an important amount of crystalline hafnon appears. |
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