Minimization of the line resistance impact on memdiode-based simulations of multilayer perceptron arrays applied to pattern recognition

In this paper, we extend the application of the Quasi-Static Memdiode model to the real-istic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) in-tended for large dataset pattern recognition. By considering ex-situ training and the classification of the hand-writte...

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Detalles Bibliográficos
Autores: Aguirre, Fernando Leonel, Gomez, Nicolás M., Pazos, Sebastián Matías, Palumbo, Félix Roberto Mario, Suñé, Jordi, Miranda, Enrique
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2021
País:Argentina
Institución:Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio:CONICET Digital (CONICET)
Idioma:inglés
OAI Identifier:oai:ri.conicet.gov.ar:11336/165149
Acceso en línea:http://hdl.handle.net/11336/165149
Access Level:acceso abierto
Palabra clave:CROSS-POINT
MEMORY
MEMRISTOR
MULTILAYER PERCEPTRON
NEUROMORPHIC
PATTERN RECOGNITION
RESISTIVE-SWITCHING
RRAM
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
Descripción
Sumario:In this paper, we extend the application of the Quasi-Static Memdiode model to the real-istic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) in-tended for large dataset pattern recognition. By considering ex-situ training and the classification of the hand-written characters of the MNIST database, we evaluate the degradation of the inference accuracy due to the interconnection resistances for MLPs involving up to three hidden neural layers. Two approaches to reduce the impact of the line resistance are considered and implemented in our simulations, they are the inclusion of an iterative calibration algorithm and the partitioning of the synaptic layers into smaller blocks. The obtained results indicate that MLPs are more sensitive to the line resistance effect than SLPs and that partitioning is the most effective way to minimize the impact of high line resistance values.