Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. The main trend of the results shows that the nanolaminates stack presents the...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2012 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/199518 |
| Acceso en línea: | http://hdl.handle.net/11336/199518 |
| Access Level: | acceso abierto |
| Palabra clave: | HIGH-K GATE DIELECTRICS MOS DEVICES RADIATION EFFECTS https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
| Sumario: | MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. The main trend of the results shows that the nanolaminates stack presents the highest levels of hysteresis and stretch-out of the C-V curves, suggesting that interface layers between dielectrics could play a relevant role in the study of the radiation response. |
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