CMOS differential and amplified dosimeter with field oxide N-channel MOSFETs
We propose the use of a CMOS differential circuit with inherent amplification to enhance the performance of n-channel field oxide MOSFETs as ionizing radiation dosimeters. These new dosimeters are aimed to be used in low dose applications such as X-ray diagnosis. The circuit is presented and describ...
| Authors: | , , , , , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 2014 |
| Country: | Argentina |
| Institution: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repository: | CONICET Digital (CONICET) |
| Language: | English |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/39551 |
| Online Access: | http://hdl.handle.net/11336/39551 |
| Access Level: | Open access |
| Keyword: | Dosimeters Mos Devices Radiation Effects Solid-State Detectors https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
| Summary: | We propose the use of a CMOS differential circuit with inherent amplification to enhance the performance of n-channel field oxide MOSFETs as ionizing radiation dosimeters. These new dosimeters are aimed to be used in low dose applications such as X-ray diagnosis. The circuit is presented and described, and a discrete-level prototype was tested as regards sensitivity, temperature variations compensation and signal-to-noise ratio at different operation conditions. Results show that, comparing to a single MOSFET dosimeter, on chip amplification is possible along with temperature induced error attenuation. The highest sensitivity measured with respect to γ radiation was 0.4 V/rad. The circuit successfully measured the dose delivered in an X-ray image diagnosis environment with a sensitivity of approximately 0.5 V/rad. |
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