Spontaneous spin polatization in doped semiconductor quantum wells

We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We predict that this transition could be observed in narrow quantum wells at electron densities somewhat lower than the ones that have been considered experimen...

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Detalles Bibliográficos
Autores: Canet Juric, Lorena, Tamborenea, Pablo Ignacio
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2005
País:Argentina
Institución:Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio:CONICET Digital (CONICET)
Idioma:inglés
OAI Identifier:oai:ri.conicet.gov.ar:11336/61074
Acceso en línea:http://hdl.handle.net/11336/61074
Access Level:acceso abierto
Palabra clave:Semiconductors
Quantum Wells
Quantum Phase Transition
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
id AR_1f28bfbcb38c76fdec7ff0915d19dfcb
oai_identifier_str oai:ri.conicet.gov.ar:11336/61074
network_acronym_str AR
network_name_str Argentina
repository_id_str
spelling Spontaneous spin polatization in doped semiconductor quantum wellsCanet Juric, LorenaTamborenea, Pablo IgnacioSemiconductorsQuantum WellsQuantum Phase Transitionhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We predict that this transition could be observed in narrow quantum wells at electron densities somewhat lower than the ones that have been considered experimentally thus far, and that there exists an upper limit for the well width beyond which there would be no transition as long as only one subband is populated. Our calculations are done within a screened Hartree-Fock approximation with a polarization-dependent effective mass, which is adjusted to match the critical density predicted by Monte Carlo calculations for the strictly two-dimensional electron gas. © EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2005.Fil: Canet Juric, Lorena. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Tamborenea, Pablo Ignacio. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaSpringer2005-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/61074Canet Juric, Lorena; Tamborenea, Pablo Ignacio; Spontaneous spin polatization in doped semiconductor quantum wells; Springer; European Physical Journal B - Condensed Matter; 45; 1; 12-2005; 9-171434-6028CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://link.springer.com/article/10.1140%2Fepjb%2Fe2005-00159-6info:eu-repo/semantics/altIdentifier/doi/10.1140/epjb/e2005-00159-6info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2024-05-08T13:58:57Zoai:ri.conicet.gov.ar:11336/61074instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982024-05-08 13:58:58.098CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Spontaneous spin polatization in doped semiconductor quantum wells
title Spontaneous spin polatization in doped semiconductor quantum wells
spellingShingle Spontaneous spin polatization in doped semiconductor quantum wells
Canet Juric, Lorena
Semiconductors
Quantum Wells
Quantum Phase Transition
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
title_short Spontaneous spin polatization in doped semiconductor quantum wells
title_full Spontaneous spin polatization in doped semiconductor quantum wells
title_fullStr Spontaneous spin polatization in doped semiconductor quantum wells
title_full_unstemmed Spontaneous spin polatization in doped semiconductor quantum wells
title_sort Spontaneous spin polatization in doped semiconductor quantum wells
dc.creator.none.fl_str_mv Canet Juric, Lorena
Tamborenea, Pablo Ignacio
author Canet Juric, Lorena
author_facet Canet Juric, Lorena
Tamborenea, Pablo Ignacio
author_role author
author2 Tamborenea, Pablo Ignacio
author2_role author
dc.subject.none.fl_str_mv Semiconductors
Quantum Wells
Quantum Phase Transition
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
topic Semiconductors
Quantum Wells
Quantum Phase Transition
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
description We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We predict that this transition could be observed in narrow quantum wells at electron densities somewhat lower than the ones that have been considered experimentally thus far, and that there exists an upper limit for the well width beyond which there would be no transition as long as only one subband is populated. Our calculations are done within a screened Hartree-Fock approximation with a polarization-dependent effective mass, which is adjusted to match the critical density predicted by Monte Carlo calculations for the strictly two-dimensional electron gas. © EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2005.
publishDate 2005
dc.date.none.fl_str_mv 2005-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/61074
Canet Juric, Lorena; Tamborenea, Pablo Ignacio; Spontaneous spin polatization in doped semiconductor quantum wells; Springer; European Physical Journal B - Condensed Matter; 45; 1; 12-2005; 9-17
1434-6028
CONICET Digital
CONICET
url http://hdl.handle.net/11336/61074
identifier_str_mv Canet Juric, Lorena; Tamborenea, Pablo Ignacio; Spontaneous spin polatization in doped semiconductor quantum wells; Springer; European Physical Journal B - Condensed Matter; 45; 1; 12-2005; 9-17
1434-6028
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://link.springer.com/article/10.1140%2Fepjb%2Fe2005-00159-6
info:eu-repo/semantics/altIdentifier/doi/10.1140/epjb/e2005-00159-6
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1799195641545490432
score 15.812429

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