Spontaneous spin polatization in doped semiconductor quantum wells
We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We predict that this transition could be observed in narrow quantum wells at electron densities somewhat lower than the ones that have been considered experimen...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2005 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/61074 |
| Acceso en línea: | http://hdl.handle.net/11336/61074 |
| Access Level: | acceso abierto |
| Palabra clave: | Semiconductors Quantum Wells Quantum Phase Transition https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We predict that this transition could be observed in narrow quantum wells at electron densities somewhat lower than the ones that have been considered experimentally thus far, and that there exists an upper limit for the well width beyond which there would be no transition as long as only one subband is populated. Our calculations are done within a screened Hartree-Fock approximation with a polarization-dependent effective mass, which is adjusted to match the critical density predicted by Monte Carlo calculations for the strictly two-dimensional electron gas. © EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2005. |
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