Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a meth...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/29485 |
| Acceso en línea: | http://hdl.handle.net/11336/29485 |
| Access Level: | acceso abierto |
| Palabra clave: | Multilevel Cell Non-Volatile Memory Resistive Switching Reram https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
| Sumario: | We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs. Index Terms?Multilevel cell, Resistive switching, Non-volatile memory, ReRAM . |
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