Tailoring of Contacts on Silicon Carbide-Procedures and Mechanisms

Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tant...

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Detalles Bibliográficos
Autor: SERGIO ALFONSO PEREZ GARCIA
Tipo de recurso: libro
Estado:Versión enviada para evaluación y publicación
Fecha de publicación:2007
País:México
Institución:Centro de Investigación en Materiales Avanzados
Repositorio:Fuente de Objetos Científicos Open Access del CIMAV
Idioma:inglés
OAI Identifier:oai:cimav.repositorioinstitucional.mx:1004/1936
Acceso en línea:http://cimav.repositorioinstitucional.mx/jspui/handle/1004/1936
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/SiC/Silicon Carbide
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2299
info:eu-repo/classification/cti/229999
id MX_fdc6313cc2ff7caaa7ddfb9b50ccf1ba
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spelling Tailoring of Contacts on Silicon Carbide-Procedures and MechanismsSERGIO ALFONSO PEREZ GARCIAinfo:eu-repo/classification/SiC/Silicon Carbideinfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/2299info:eu-repo/classification/cti/229999info:eu-repo/classification/cti/229999Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. Both these metals are suitable as precursors for creating Schottky and ohmic contacts onto n-SiC. Ni is widely used because of its ability to form silicides while Ta can form both silicides and carbides. The initial stage of the reaction between a given metal and SiC is important for the silicide formation on SiC. In order to address this problem experimentally, SiC was coated with an ultra thin Ni layer and shown that the silicide formed grows as islands on the SiC surface upon heat treatment. By using the same method, a comparison between different initial Ni thicknesses is presented. This gives an idea of the Ni critical thickness that is needed, before diffusion becomes the only growing parameter for the silicide formation. During silicide formation, C depletion from the SiC takes place. Lately, the influence of C to the contact behaviour has been a controversial issue. Thus, the capability to control the C formation is of importance. Control of C formation and its distribution was achieved following a simple and practical method by means of co-sputtering of Ni and Si. Presence of C can be also avoided by using Ta or Ni/Ta for the metallization. Moreover, Ta products have the advantage of an increased thermostability compared to the ones of Ni. The results summarised here were obtained by means of X-ray photoelectron spectroscopy (XPS) and angle-resolved X-ray photoelectron spectroscopy technique (ARXPS). Depth profiles were carried out by means of XPS and Auger electron spectroscopy (AES). Grazing-angle X-ray diffraction (XRD) was used to identify the phases formed. Characteristic I-V curves of the materials were recorded and a comparison between the traditional metallization and co-sputtering technique was done.https://research.chalmers.se/publication/405892007info:eu-repo/semantics/bookinfo:eu-repo/semantics/submittedVersionapplication/pdfhttp://cimav.repositorioinstitucional.mx/jspui/handle/1004/1936reponame:Fuente de Objetos Científicos Open Access del CIMAVinstname:Centro de Investigación en Materiales Avanzadosinstacron:CIMAVenginfo:eu-repo/semantics/openAccesshttp://creativecommons.org/about/cc0/oai:cimav.repositorioinstitucional.mx:1004/19362024-08-28T03:19:08Z
dc.title.none.fl_str_mv Tailoring of Contacts on Silicon Carbide-Procedures and Mechanisms
title Tailoring of Contacts on Silicon Carbide-Procedures and Mechanisms
spellingShingle Tailoring of Contacts on Silicon Carbide-Procedures and Mechanisms
SERGIO ALFONSO PEREZ GARCIA
info:eu-repo/classification/SiC/Silicon Carbide
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2299
info:eu-repo/classification/cti/229999
info:eu-repo/classification/cti/229999
title_short Tailoring of Contacts on Silicon Carbide-Procedures and Mechanisms
title_full Tailoring of Contacts on Silicon Carbide-Procedures and Mechanisms
title_fullStr Tailoring of Contacts on Silicon Carbide-Procedures and Mechanisms
title_full_unstemmed Tailoring of Contacts on Silicon Carbide-Procedures and Mechanisms
title_sort Tailoring of Contacts on Silicon Carbide-Procedures and Mechanisms
dc.creator.none.fl_str_mv SERGIO ALFONSO PEREZ GARCIA
author SERGIO ALFONSO PEREZ GARCIA
author_facet SERGIO ALFONSO PEREZ GARCIA
author_role author
dc.subject.none.fl_str_mv info:eu-repo/classification/SiC/Silicon Carbide
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2299
info:eu-repo/classification/cti/229999
info:eu-repo/classification/cti/229999
topic info:eu-repo/classification/SiC/Silicon Carbide
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2299
info:eu-repo/classification/cti/229999
info:eu-repo/classification/cti/229999
description Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. Both these metals are suitable as precursors for creating Schottky and ohmic contacts onto n-SiC. Ni is widely used because of its ability to form silicides while Ta can form both silicides and carbides. The initial stage of the reaction between a given metal and SiC is important for the silicide formation on SiC. In order to address this problem experimentally, SiC was coated with an ultra thin Ni layer and shown that the silicide formed grows as islands on the SiC surface upon heat treatment. By using the same method, a comparison between different initial Ni thicknesses is presented. This gives an idea of the Ni critical thickness that is needed, before diffusion becomes the only growing parameter for the silicide formation. During silicide formation, C depletion from the SiC takes place. Lately, the influence of C to the contact behaviour has been a controversial issue. Thus, the capability to control the C formation is of importance. Control of C formation and its distribution was achieved following a simple and practical method by means of co-sputtering of Ni and Si. Presence of C can be also avoided by using Ta or Ni/Ta for the metallization. Moreover, Ta products have the advantage of an increased thermostability compared to the ones of Ni. The results summarised here were obtained by means of X-ray photoelectron spectroscopy (XPS) and angle-resolved X-ray photoelectron spectroscopy technique (ARXPS). Depth profiles were carried out by means of XPS and Auger electron spectroscopy (AES). Grazing-angle X-ray diffraction (XRD) was used to identify the phases formed. Characteristic I-V curves of the materials were recorded and a comparison between the traditional metallization and co-sputtering technique was done.
publishDate 2007
dc.date.none.fl_str_mv 2007
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dc.identifier.none.fl_str_mv http://cimav.repositorioinstitucional.mx/jspui/handle/1004/1936
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dc.language.none.fl_str_mv eng
language eng
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
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eu_rights_str_mv openAccess
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