Band gap energy in Zn-rich Zn1¡xCdxTe thin films grown by r.f. sputtering
Ternary Zn1¡xCdxTe semiconducting thin films were grown on 7059 Corning glass substrates at room temperature by co-sputtering froma ZnTe-Cd target. The visible Cd-area onto ZnTe target was varied to cover 0% - 4% of the total area. The optical and structural properties ofthe films were analysed as a...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2004 |
| País: | México |
| Institución: | Centro de Investigación y de Estudios Avanzados del IPN |
| Repositorio: | Redalyc-CINVESTAV |
| OAI Identifier: | oai:redalyc.org:57050606 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57050606 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas II ZnCdTe thin films VI semiconductors radio frequency sputtering |
| Sumario: | Ternary Zn1¡xCdxTe semiconducting thin films were grown on 7059 Corning glass substrates at room temperature by co-sputtering froma ZnTe-Cd target. The visible Cd-area onto ZnTe target was varied to cover 0% - 4% of the total area. The optical and structural properties ofthe films were analysed as a function of the Cd concentration (x) on the layers. The sharp diffraction lines indicate mainly the ZnTe in cubicphase. When the cadmium was incorporated into the ZnTe lattice, the band gap energy (Eg) decreased from 2.2748 eV (x=0) to 2.2226 eV(x= 0.081). We found a linear relationship between Eg and (x) in the interval of (x) studied, that predicts a value of the bowing parameter bin the Eg(x) = Ego +ax+bx2 relationship, which coincides with the value of b calculated by making the same study for Cd-rich CdZnTe.This result becomes interesting given the large number of values reported for b and a for Eg(x) of this ternary material. |
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