OPTICAL INJECTION OF SPIN POPULATION AND SPIN CURRENT IN SEMICONDUCTOR SURFACES
"We present an ab initio study of the GaAs(11) surface. In particular, the spin injection current, the electrical injection current and the degree of spin polarization are calculated for one-photon excitations. First, we present a formal derivation of the formulas used to obtain such responses;...
| Autor: | |
|---|---|
| Tipo de recurso: | tesis de maestría |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | México |
| Institución: | Centro de Investigaciones en Óptica |
| Repositorio: | Repositorio Institucional CIO |
| Idioma: | inglés |
| OAI Identifier: | oai:cio.repositorioinstitucional.mx:1002/840 |
| Acceso en línea: | http://cio.repositorioinstitucional.mx/jspui/handle/1002/840 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/AUTOR/AB INITIO, INJECTION PROCESS, GAAS(110) info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2211 info:eu-repo/classification/cti/221124 |
| Sumario: | "We present an ab initio study of the GaAs(11) surface. In particular, the spin injection current, the electrical injection current and the degree of spin polarization are calculated for one-photon excitations. First, we present a formal derivation of the formulas used to obtain such responses; we explicitly obtain the expressions for both the total and the layered contributions. In the second chapter, we give an introduction of the method used to calculate the wave function for a crystalline surface along with all its approximations. In the third chapter, we make a convergence study to ensure that our calculations will be correct within our approximations. Finally, in chapter 4, we present our results and its possible applications." |
|---|