Dynamics of the probability density in the internal region of a double for a Dirac delta potential

Based on exact analytical solutions of the time-dependent Schrödinger equation, and initial conditions of plane waves cut in x-space by an absorbing or reflecting quantum shutter, the dynamic behavior of the electronic probability density or buildup is analyzed, in the internal region of a double Di...

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Detalles Bibliográficos
Autor: Hernández Maldonado, Alberto
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2020
País:México
Institución:UNIVERSIDAD AUTÓNOMA DE BAJA CALIFORNIA
Repositorio:Revista de Ciencias Tecnológicas
Idioma:español
OAI Identifier:oai:ojs.recit.uabc.mx:article/62
Acceso en línea:https://recit.uabc.mx/index.php/revista/article/view/62
Access Level:acceso abierto
Palabra clave:Quantum transients
Double delta potential
Moshinsky shutter.
Transitorios cuánticos
Potencial doble delta
Obturador de Moshinsky.
Descripción
Sumario:Based on exact analytical solutions of the time-dependent Schrödinger equation, and initial conditions of plane waves cut in x-space by an absorbing or reflecting quantum shutter, the dynamic behavior of the electronic probability density or buildup is analyzed, in the internal region of a double Dirac delta potential double, from very short times (given in half-lives), until reaching the stationary situation. The buildup is compared between both cases, absorbent and reflective quantum shutter, finding that for short times the buildup depends on the initial condition (IC) used, while for long times, it is independent of said IC. Using the reflecting IC, the buildup is analyzed from practically zero time, until the steady-state is reached. The results found may be relevant in the context of rapid response in devices known as resonant tunneling diodes.