Use of hafnium(IV) oxide in biosensors
Hafnium(IV) oxide is a material with properties that can increase the sensitivity, durability, and reliability of biosensors made from silicon dioxide and other semiconductor materials due to its high dielectric constant, thermodynamic stability, and the simplicity with which it can be deposited. Th...
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| Tipo de documento: | artigo |
| Estado: | Versão publicada |
| Data de publicação: | 2018 |
| País: | México |
| Recursos: | Universidad Autónoma de Zacatecas |
| Repositório: | Repositorio Institucional Caxcán |
| Idioma: | inglês |
| OAI Identifier: | oai:http://ricaxcan.uaz.edu.mx:20.500.11845/1988 |
| Acesso em linha: | http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/1988 |
| Access Level: | Acceso aberto |
| Palavra-chave: | CIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1] Biosensor immunosensor hafnium(IV) oxide field-effect transistor DNA sensor |
| Resumo: | Hafnium(IV) oxide is a material with properties that can increase the sensitivity, durability, and reliability of biosensors made from silicon dioxide and other semiconductor materials due to its high dielectric constant, thermodynamic stability, and the simplicity with which it can be deposited. This work describes the use of this material in biosensors based on field-effect transistors to detect ions and DNA, in immunosensors to detect an antigen-antibody complex, its use as a contrast material in computed tomography scans and the possibility of using it in optic biosensors in the infrared region. Its low cost and versatility in the field of biosensors is underscored. |
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