Theoretical study of structural and electronic properties in BaTiO3 and BaZrO3 systems

A theoretical study was carried out on two ABO3 type perovskite minerals, Barium Titanate (BaTiO3) and Barium Zirconate (BaZrO3). The parameters were optimized for a Perdew-Burke-Erszerhof (PBE) pseudopotential of the ultrasoft type, by using the SIESTA code, which is supported by the Density Functi...

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Detalles Bibliográficos
Autores: López-Ortega, Leonardo, Gutiérrez-García, Brayann Aldair, Arteaga-Varela, Miguel, Herrera-Carbajal, Alejandro de Jesús, Salinas-Rodríguez , Eleazar, Rodríguez-Lugo, Ventura
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2020
País:México
Institución:UNIVERSIDAD AUTÓNOMA DEL ESTADO DE HIDALGO
Repositorio:PÄDI Boletín Científico de Ciencias Básicas e Ingeniería del ICBI
Idioma:español
OAI Identifier:oai:repository.uaeh.edu.mx:article/6322
Acceso en línea:https://repository.uaeh.edu.mx/revistas/index.php/icbi/article/view/6322
Access Level:acceso abierto
Palabra clave:BaTiO3
BaZrO3
DFT
Optimization
Pseudopotential
Perovskite
Optimización
Pseudopotencial
Perovskita
Descripción
Sumario:A theoretical study was carried out on two ABO3 type perovskite minerals, Barium Titanate (BaTiO3) and Barium Zirconate (BaZrO3). The parameters were optimized for a Perdew-Burke-Erszerhof (PBE) pseudopotential of the ultrasoft type, by using the SIESTA code, which is supported by the Density Functional Theory (DFT). The structures were then optimized, altering the lattice parameter of both perovskites allowing the most stable (minimum energy) to be determined. For the minimum energy structures of BaTiO3 and BaZrO3, lattice parameters corresponding to 4.104 Å and 4.306 Å respectively were obtained, which differ slightly from those reported experimentally, whose values ​​are 4.004 Å and 4.276 Å, showing that SIESTA allows obtaining approximations higher than 97%, also the band structure showed the indirect behavior in the transition from the valence band to the conduction band for both materials with semiconductor characteristics, having values ​​of 1.64 and 2.77 eV respectively..