A novel Epsilon Near Zero (ENZ) tunneling circuit using microstrip technology for high integrability applications
A novel compact Epsilon Near Zero (ENZ) tunneling circuit with microstrip coupling for high integrability applications is presented. Full design procedure, simulation and experimental results are shown, and a methodology to extract the e®ective permittivity and propagation constants in the tunnel is...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2010 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1462 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1462 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | A novel compact Epsilon Near Zero (ENZ) tunneling circuit with microstrip coupling for high integrability applications is presented. Full design procedure, simulation and experimental results are shown, and a methodology to extract the e®ective permittivity and propagation constants in the tunnel is described. Detailed analysis of the dependence on external quality factor and tunnel to feed height ratio is investigated. Simulation and measurement results of the ENZ tunnel structure are in good agreement. |
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