UV-sensitive optical sensors based on ITO-gallium phosphide heterojunctions
Design and characteristics of wide-band UV sensors based on ITO/GaP heterostructures are discussed. Such sensors have perfect electrical parameters and high UV-visible sensitivity in comparison with surface-barrier structures using a semitransparent thin metal film as an electrode. Many applications...
| Autores: | , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2010 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1492 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1492 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | Design and characteristics of wide-band UV sensors based on ITO/GaP heterostructures are discussed. Such sensors have perfect electrical parameters and high UV-visible sensitivity in comparison with surface-barrier structures using a semitransparent thin metal film as an electrode. Many applications require UV sensors with an effective rejection of visible radiation and a wide temperature operating interval. For this aim, the theoretical modelling of extreme selective optical sensors with a double Ag/ITO thin film on the GaP surface, in which the thin silver film serves as a narrow bandpass filter at 320 nm, has been conducted. With this modelling the optimal thickness combination for the silver and ITO films was found for the maximum rejection of the sensitivity to visible radiation. |
|---|