Modeling of the Second harmonic generation in SiO2 sol-gel films doped with nanoscopic DR1 molecules as function of the poling time
A physical description for the second harmonic generation (SHG) intensity as function of corona poling time in SiO2:DR1 sol–gel films is shown. This model describes the poling time dependence of the SHG based on a damped oscillator description of the nanomolecules of DR1. Instead of an usual biexpon...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | México |
| Institución: | Instituto Politécnico Nacional |
| Repositorio: | Repositorio Digital del IPN |
| OAI Identifier: | oai:www.repositoriodigital.ipn.mx:123456789/10628 |
| Acceso en línea: | http://hdl.handle.net/123456789/104 http://www.repositoriodigital.ipn.mx/handle/123456789/10628 |
| Access Level: | acceso abierto |
| Palabra clave: | Second harmonic generation push-pull |
| Sumario: | A physical description for the second harmonic generation (SHG) intensity as function of corona poling time in SiO2:DR1 sol–gel films is shown. This model describes the poling time dependence of the SHG based on a damped oscillator description of the nanomolecules of DR1. Instead of an usual biexponential or polynomial model with meaningless parameters, all the parameters from our model have a physical interpretation. The model results have been experimentally verified in several SiO2:DR1 sol–gel films with different sidechain doping concentrations. |
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