ffect of annealing temperature on the morphology of hybrid structures of ZnO/silicon crystalline and porous silicon
In present work zinc oxide (ZnO) was deposited over porous silicon (Si-P) substrates at 400°C and 600°C using magnetron sputtering technique. Scanning electron microscopy (SEM) results indicated the formation the interconnected holes patterns of porous silicon. The change in morphology of ZnO over p...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2020 |
| País: | México |
| Institución: | UNIVERSIDAD AUTÓNOMA DEL ESTADO DE HIDALGO |
| Repositorio: | PÄDI Boletín Científico de Ciencias Básicas e Ingeniería del ICBI |
| Idioma: | español |
| OAI Identifier: | oai:repository.uaeh.edu.mx:article/4481 |
| Acceso en línea: | https://repository.uaeh.edu.mx/revistas/index.php/icbi/article/view/4481 |
| Access Level: | acceso abierto |
| Palabra clave: | zinc oxide porous silicon gas sensor óxido de zinc silicio poroso sensor de gas |
| Sumario: | In present work zinc oxide (ZnO) was deposited over porous silicon (Si-P) substrates at 400°C and 600°C using magnetron sputtering technique. Scanning electron microscopy (SEM) results indicated the formation the interconnected holes patterns of porous silicon. The change in morphology of ZnO over porous silicon at different temperature was examined with atomic force microscopic (AFM). AFM results revealed that, ZnO deposition at 400°C possess relatively lower roughness. The increase in temperature deposition resulted in the height increase of ZnO grains. The results presented could give us the possibility to fabricate substrates capable for gas sensing with improved sensitivity due to porous substrates and deposited temperature. |
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